Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE

Yanxiong E; Zhibiao HAO; Jiadong YU; Chao WU; Lai WANG; Bing XIONG; Jian WANG; Yanjun HAN; Changzheng SUN; Yi LUO

doi:10.1007/s12200-016-0613-4

Frontiers of Optoelectronics, Volume. 9, Issue 2, 318(2016)

Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE

Yanxiong E, Zhibiao HAO^*, Jiadong YU, Chao WU, Lai WANG, Bing XIONG, Jian WANG, Yanjun HAN, Changzheng SUN, and Yi LUO

Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University,Beijing 100084, China

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Yanxiong E, Zhibiao HAO, Jiadong YU, Chao WU, Lai WANG, Bing XIONG, Jian WANG, Yanjun HAN, Changzheng SUN, Yi LUO. Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE[J]. Frontiers of Optoelectronics, 2016, 9(2): 318

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Paper Information

Category: RESEARCH ARTICLE

Received: Jan. 28, 2016

Accepted: Feb. 15, 2016

Published Online: Oct. 21, 2016

The Author Email: Zhibiao HAO (zbhao@tsinghua.edu.cn)

DOI:10.1007/s12200-016-0613-4

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology