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Journal of Semiconductors, Volume. 45, Issue 1, 012101(2024)

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb

Zhi Deng^1,2, Hailong Wang^1,2、*, Qiqi Wei^1,2, Lei Liu^1,2, Hongli Sun^1,2, Dong Pan^1,2, Dahai Wei^1,2, and Jianhua Zhao^1,2

Author Affiliations

¹State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China

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Zhi Deng, Hailong Wang, Qiqi Wei, Lei Liu, Hongli Sun, Dong Pan, Dahai Wei, Jianhua Zhao. Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb[J]. Journal of Semiconductors, 2024, 45(1): 012101

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Paper Information

Category: Articles

Received: Aug. 6, 2023

Accepted: --

Published Online: Mar. 13, 2024

The Author Email: Hailong Wang (HLWang)

DOI:10.1088/1674-4926/45/1/012101

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