Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga1-x-yFexNiySb

Zhi Deng; Hailong Wang; Qiqi Wei; Lei Liu; Hongli Sun; Dong Pan; Dahai Wei; Jianhua Zhao

doi:10.1088/1674-4926/45/1/012101

Journal of Semiconductors, Volume. 45, Issue 1, 012101(2024)

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb

Zhi Deng^1,2, Hailong Wang^1,2、*, Qiqi Wei^1,2, Lei Liu^1,2, Hongli Sun^1,2, Dong Pan^1,2, Dahai Wei^1,2, and Jianhua Zhao^1,2

Author Affiliations

¹State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China

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Fig. 1. (Color online) (a) Schematic layer structure of Ga_1-x-yFe_xNi_ySb samples. (b) The RHEED pattern of an undoped GaSb sample. (c)−(f) RHEED patterns taken along the [110] azimuth after the growth of Ga_1-x-yFe_xNi_ySb layers for samples B1−B4 (x ≈ 24%, y = 1.7%−6.1%).

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Fig. 2. (Color online) (a) XRD spectra of Ga_1-x-yFe_xNi_ySb samples A1−A4 (x = 25.2%−29.8%, y = 0). (b) XRD spectra of samples B1−B4 (x ≈ 24%, y = 1.7%−6.1%). (c) x dependence of the lattice constant of A1−A4. (d) y dependence of the lattice constant of B1−B4.

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Fig. 3. (Color online) (a) The cross-sectional STEM image of typical Ga_1-_x-yFe_xNi_ySb sample B4 (x = 24.3%, y = 6.1%). (b) SAED pattern of the Ga_1-_x-yFe_xNi_ySb layers in sample B4. (c) The area marked by red rectangles shown in Fig. 3(a).

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Fig. 4. (Color online) Magnetic hysteresis curves (M−H) measured at 10 K of samples B1−B4 (x ≈ 24%, y = 1.7%−6.1%) with a magnetic field applied along the [001] axis and the [110] axis. The blue and red arrows in (a)−(d) signify the perpendicular saturation magnetic fields and the positions of H_S.

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Fig. 5. (Color online) The magnetic field dependence of Hall resistance curves (R_Hall−H) of the samples B1−B4 (x ≈ 24%, y = 1.7%−6.1%) measured at 10 K.

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Table 1. Curie temperature T_C, hole mobility μ at 10 K, saturation magnetization M_S and anisotropy constant K_u of Ga_1-x-yFe_xNi_ySb films with different Fe concentration x and Ni concentration y.

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Table 1. Curie temperature T_C, hole mobility μ at 10 K, saturation magnetization M_S and anisotropy constant K_u of Ga_1-x-yFe_xNi_ySb films with different Fe concentration x and Ni concentration y.

Sample	x (%)	y (%)	T_C (K)	μ (cm²/(V∙s))	M_S (emu/cc)	K_u (erg/cc)
A1	25.2	0	337	6.2	142	−1.8 × 10³
A2	26.9	0	351	3.4	144	1.2 × 10³
A3	28.0	0	362	1.9	147	4.5 ×10³
A4	29.8	0	375	1.1	151	7.6 ×10³
B1	23.7	1.7	319	31.3	148	−2.1 × 10³
B2	24.2	2.8	336	17.9	152	1.4 × 10⁵
B3	23.9	4.5	343	7.5	159	2.3 × 10⁵
B4	24.3	6.1	354	4.6	165	3.8 × 10⁵

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Zhi Deng, Hailong Wang, Qiqi Wei, Lei Liu, Hongli Sun, Dong Pan, Dahai Wei, Jianhua Zhao. Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_1-x-yFe_xNi_ySb[J]. Journal of Semiconductors, 2024, 45(1): 012101

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Paper Information

Category: Articles

Received: Aug. 6, 2023

Accepted: --

Published Online: Mar. 13, 2024

The Author Email: Hailong Wang (HLWang)

DOI:10.1088/1674-4926/45/1/012101

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Curie temperature TC, hole mobility μ at 10 K, saturation magnetization MS and anisotropy constant Ku of Ga1-x-yFexNiySb films with different Fe concentration x and Ni concentration y.

Table 1. Curie temperature TC, hole mobility μ at 10 K, saturation magnetization MS and anisotropy constant Ku of Ga1-x-yFexNiySb films with different Fe concentration x and Ni concentration y.

Table 1. Curie temperature T_C, hole mobility μ at 10 K, saturation magnetization M_S and anisotropy constant K_u of Ga_1-x-yFe_xNi_ySb films with different Fe concentration x and Ni concentration y.

Table 1. Curie temperature T_C, hole mobility μ at 10 K, saturation magnetization M_S and anisotropy constant K_u of Ga_1-x-yFe_xNi_ySb films with different Fe concentration x and Ni concentration y.