[1] Tsai H Y, Su F C, Chou C H et al. Wearable inverse light-emitting diode sensor for measuring light intensity at specific wavelengths in light therapy[J]. IEEE Transactions on Instrumentation and Measurement, 68, 1561-1574(2019).

[2] Anthopoulou E, Doulos L. The effect of the continuous energy efficient upgrading of LED street lighting technology: the case study of Egnatia Odos[C](2019).

[3] Jiang X W, Zhao J W, Wu H. Design and optimization of flip-chip light-emitting diode with high light extraction efficiency[J]. Laser & Optoelectronics Progress, 55, 092302(2018).

[4] Ban Z, Liang J Q, Lü J G et al. Photoelectric characteristics of micro flip-chip AlGaInP light emitting diode array[J]. Acta Optica Sinica, 38, 0923001(2018).

[5] Li M M, Hu X L, Guo W L. Research progress on energy efficiency of GaN-based LEDs[J]. China Illuminating Engineering Journal, 31, 8-15(2020).

[6] Tang Y R, Zhao D, Yi X Z et al. Current and temperature effects on luminescence properties of blue and white LEDs[J]. Chinese Journal of Lasers, 48, 2103003(2021).

[7] Shen G D, Zhang J M, Zou D S et al. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes[J]. Acta Physica Sinica, 57, 472-476(2008).

[8] Zhou S J, Wang S F, Liu S et al. High power GaN-based LEDs with low optical loss electrode structure[J]. Optics & Laser Technology, 54, 321-325(2013).

[9] Liu L, Hu X L, Wang H. N-type electrode patterns design and device fabrication of GaN-based vertical structure LEDs[J]. Chinese Journal of Luminescence, 37, 338-345(2016).

[10] Lü J J, Zheng C J, Zhou S J et al. Optimization design and simulation calculation of LED electrode structure[J]. Semiconductor Optoelectronics, 38, 483-487(2017).

[11] Chao P F, Xu Y C, Liu C H et al. Optimization and preparation of GaN-based LED chip electrode structure[J]. Laser & Optoelectronics Progress, 57, 072301(2020).

[12] Deng J. Research on optimization of high energy efficiency LED electrode and fabrication technology[D](2020).

[13] Cao W W, Zhu Y X, Guo W L et al. Improving luminous efficacy of the GaN-based light-emitting diodes by using different shapes of current blocking layer[J]. Chinese Journal of Luminescence, 34, 480-483(2013).