Acta Optica Sinica, Volume. 42, Issue 19, 1923003(2022)
Power Light-Emitting Diode with Novel Electrode Structure
Figures & Tables(9)
Fig. 1. Profile diagram of preparation process of GaN-based LED. (a) Etching N electrode step; (b) depositing CBL and preparing ITO layer; (c) preparing passivation layer and etching electrode window; (d) preparing metal electrode
Fig. 2. Microscope image of LED with discontinuous ohmic contact P/N electrode and structural diagram of CBL. (a) Microscope image of LED with discontinuous ohmic contact P/N electrode; (b) structural diagram of continuous CBL structure; (c) structural diagram of discontinuous CBL structure
Fig. 8. EQE and WPE of LED with 7 different electrode structures varying with current. (a) EQE; (b) WPE
Table 1. Structure information and numbering of devices
View tableTable 1. Structure information and numbering of devices
Label State of CBL P electrode hole
size /（μm
） P electrode hole spacing /μm N electrode hole
size /（μm
） N electrode hole spacing /μm LED I Discontinuous 5×15 20 17×15 37 LED II Continuous 5×15 20 17×15 37 LED III Discontinuous 5×15 25 10×5 45 LED IV Discontinuous 5×15 25 10×5 40 LED V Discontinuous 5×15 25 17×15 45 LED VI Discontinuous 5×15 30 17×15 37 LED VII Discontinuous 10×15 20 17×15 37
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Aoqi Fang, Weiling Guo, Hao Xu, Jie Deng, Jiaxin Chen, Jie Sun. Power Light-Emitting Diode with Novel Electrode Structure[J]. Acta Optica Sinica, 2022, 42(19): 1923003
Paper Information
Category: Optical Devices
Received: Feb. 9, 2022
Accepted: Apr. 18, 2022
Published Online: Oct. 18, 2022
The Author Email: Weiling Guo (guoweiling@bjut.edu.cn)
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