Preparation of epi-ready InAs substrate surface for InAs/GaSb superlattice infrared detectors grown by MOCVD

Li-Jie LIU; You-Wen ZHAO; Yong HUANG; Yu ZHAO; Jun WANG; Ying-Li WANG; Gui-Ying SHEN; Hui XIE

doi:10.11972/j.issn.1001-9014.2022.02.006

Journal of Infrared and Millimeter Waves, Volume. 41, Issue 2, 420(2022)

Preparation of epi-ready InAs substrate surface for InAs/GaSb superlattice infrared detectors grown by MOCVD

Li-Jie LIU^1、*, You-Wen ZHAO^1,2, Yong HUANG³, Yu ZHAO³, Jun WANG¹, Ying-Li WANG¹, Gui-Ying SHEN¹, and Hui XIE¹

¹Key Laboratory of Semiconductor Materials Science，Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

²College of Materials Science and Opto-electronic Technology，University of Chinese Academy of Sciences，Beijing 100049，China

³Key Lab of Nanodevices and Applications，Suzhou Institute of Nano-Tech and Nano-Bionics，Chinese Academy of Sciences，Suzhou 215123，China

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Figures & Tables(9)

Fig. 1. KLA-Tencor Candela particle metrology maps of the three InAs wafer surface treated by different wet cleaning processes（a）sample A，（b）sample B，and（c）sample C

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Fig. 2. XPS spectra of wafer B and C，details of the binding energy given in Table 4

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Fig. 3. Normarski microscope（a）sample B，and（b）sample C

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Fig. 4. Hillocks defect from scanning electron microscopy after SL growth

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Fig. 5. Transmission electron microscope of hillocks defect

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Table 1. Multi-step wet cleaning processes used in this study
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Table 1. Multi-step wet cleaning processes used in this study
Sample No. Wet Chemical Cleaning Step
A NH₄OH∶H₂O₂∶H₂O=1∶1∶10 Rinse Dry
B HC1∶H₂O=1∶30 Rinse NH₄OH∶H₂O₂∶H₂O=1∶1∶10 Rinse Dry
C HC1∶H₂O=1∶30 Rinse NH₄OH∶H₂O₂∶H₂O=1∶0.2∶10 Rinse Dry

Table 2. TXRF results of the InAs wafer surface treated with different solution（10¹⁰ atoms/cm²）
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Table 2. TXRF results of the InAs wafer surface treated with different solution（10¹⁰ atoms/cm²）
Sample No Si P S C1 K Ca Ti Cr Mn Fe Ni Cu Zn
A 1 051 0 428 1 057 44 542 7 553 0 0 0 0 0 0 0
B 494 0 244 544 38 129 3 711 0 0 0 1 0 0 0
C 197 0 77 478 38 130 3 164 0 0 0 0 0 0 0

Table 3. Native oxide thickness measured by ellipsometer

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Table 3. Native oxide thickness measured by ellipsometer

Sample	X/cm	Y/cm	Thickness/Å	Average/Å
Sample A	0	1.5	15.17	15.04
	1.5	0	15.01
	0	0	14.93
	-1.5	0	15.07
	0	-1.5	15.01
Sample A	0	1.5	10.27	10.19
	1.5	0	10.34
	0	0	10.26
	-1.5	0	9.90
	0	-1.5	10.18
Sample A	0	1.5	9	8.87
	1.5	0	8.9
	0	0	8.79
	-1.5	0	8.89
	0	-1.5	8.78

Table 4. Binding energy of the peaks in XPS spectra and In/As Atomic percent of sample B and C
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Table 4. Binding energy of the peaks in XPS spectra and In/As Atomic percent of sample B and C
Sample In3d（eV） As3d（eV）
In/As
Atomic percent
In₂O₃ InAs In₂O₅ As₂O₃ As InAs
451 444 45.2 44.5 41.6 40.5
B 451.5 444.09 45.2 44.2 41.6 40.9 81.82%
C 451.4 443.93 45.1 44.1 41.3 40.6 70.61%

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Li-Jie LIU, You-Wen ZHAO, Yong HUANG, Yu ZHAO, Jun WANG, Ying-Li WANG, Gui-Ying SHEN, Hui XIE. Preparation of epi-ready InAs substrate surface for InAs/GaSb superlattice infrared detectors grown by MOCVD[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 420

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Paper Information

Category: Research Articles

Received: Jun. 18, 2021

Accepted: --

Published Online: Jul. 8, 2022

The Author Email: Li-Jie LIU (liulijie@semi.ac.cn)

DOI:10.11972/j.issn.1001-9014.2022.02.006

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Multi-step wet cleaning processes used in this study

Table 1. Multi-step wet cleaning processes used in this study

Table 2. TXRF results of the InAs wafer surface treated with different solution（1010 atoms/cm2）

Table 2. TXRF results of the InAs wafer surface treated with different solution（1010 atoms/cm2）

Table 3. Native oxide thickness measured by ellipsometer

Table 3. Native oxide thickness measured by ellipsometer

Table 4. Binding energy of the peaks in XPS spectra and In/As Atomic percent of sample B and C

Table 4. Binding energy of the peaks in XPS spectra and In/As Atomic percent of sample B and C

Table 2. TXRF results of the InAs wafer surface treated with different solution（10¹⁰ atoms/cm²）

Table 2. TXRF results of the InAs wafer surface treated with different solution（10¹⁰ atoms/cm²）