Regulation of focusing characteristics of picosecond laser internal modification processing for silicon carbide

Shiyu CAO; Renchao LIANG; Yi ZHANG

doi:10.7510/jgjs.issn.1001-3806.2025.04.007

Laser Technology, Volume. 49, Issue 4, 519(2025)

Regulation of focusing characteristics of picosecond laser internal modification processing for silicon carbide

Shiyu CAO^1,2, Renchao LIANG^1,2, and Yi ZHANG^1,2、*

¹State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, Hunan University, Changsha 410082, China

²Key Laboratory for Intelligent Laser Manufacturing of Hunan Province, Hunan University, Changsha 410082, China

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References(1)

[7] [7] CHEN W T, LEE M Ch, LIN Ch T, et al. Processing TSV wafer with stealth dicing technology[C]// 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). Taipei, China: IEEE Press, 2012: 271-273.

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Shiyu CAO, Renchao LIANG, Yi ZHANG. Regulation of focusing characteristics of picosecond laser internal modification processing for silicon carbide[J]. Laser Technology, 2025, 49(4): 519

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Paper Information

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Received: Jul. 18, 2024

Accepted: --

Published Online: Aug. 28, 2025

The Author Email: Yi ZHANG (zy@hnu.edu.cn)

DOI:10.7510/jgjs.issn.1001-3806.2025.04.007

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology