Laser Technology, Volume. 49, Issue 4, 519(2025)
Regulation of focusing characteristics of picosecond laser internal modification processing for silicon carbide
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![[in Chinese]](/Images/icon/loading.gif){kind=icon}
Table 0. [in Chinese]
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internal modification layers depth/μm speed/(mm·s−1) frequency/kHz power/W 330 150 25 1.27(0.77) 290 150 25 1.16(0.70) 245 150 25 0.99(0.60) 200 150 25 0.89(0.54) 155 150 25 0.71(0.43) 110 150 25 0.53(0.32) 65 150 25 0.35(0.21) 20 150 25 0.17(0.10)
Table 0. [in Chinese]
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internal modification layers depth/μm $ {P_1} $ $ {P_2} $ 330 1.65(1.00) 1.24(0.75) 290 1.58(0.96) 1.19(0.72) 245 1.35(0.82) 1.02(0.62) 200 1.14(0.69) 0.86(0.52) 155 0.90(0.54) 0.68(0.41) 110 0.68(0.41) 0.51(0.31) 65 0.43(0.26) 0.33(0.20) 20 0.20(0.12) 0.15(0.09)
Table 0. [in Chinese]
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technical parameters crystal structure 4H-N thickness 350.0 μm ± 25 μm orthogonal orientation deviation ±5° surface roughness Si-side Ra≤0. 5 nm；C-side Ra≤5 nm
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Shiyu CAO, Renchao LIANG, Yi ZHANG. Regulation of focusing characteristics of picosecond laser internal modification processing for silicon carbide[J]. Laser Technology, 2025, 49(4): 519
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Received: Jul. 18, 2024
Accepted: --
Published Online: Aug. 28, 2025
The Author Email: Yi ZHANG (zy@hnu.edu.cn)
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