[1] H.-Y. Chenet?al. Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication. J. Electroceram., 39, 21(2017).

[2] M. Lanzaet?al. Recommended methods to study resistive switching devices. Adv. Electron. Mater., 5, 1800143(2019).

[3] D. Kuzum, S. Yu, H.-S. Philip Wong. Synaptic electronics: Materials, devices and applications. Nanotechnology, 24, 382001(2013).

[4] I. Valovet?al. Nanobatteries in redox-based resistive switches require extension of memristor theory. Nat. Commun., 4, 1771(2013).

[5] X. Honget?al. Oxide-based RRAM materials for neuromorphic computing. J. Mater. Sci., 53, 8720(2018).

[6] J. R. Jamesonet?al. (Invited) Conductive Bridging RAM (CBRAM): Then, now, and tomorrow. ECS Trans., 75, 41(2016).

[7] I. Valov. Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs). Semicond. Sci. Technol., 32, 093006(2017).

[8] H.-S. P. Wonget?al. Metal–oxide RRAM. Proc. IEEE, 100, 1951(2012).

[9] T. Ohnoet?al. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nat. Mater., 10, 591(2011).

[10] J. R. Jamesonet?al. Conductive-bridge memory (CBRAM) with excellent high-temperature retention. 2013 IEEE Int. Electron Devices Meeting, 30.1.1-30.1.4(2013). https://doi.org/10.1109/IEDM.2013.6724721

[11] G. Palmaet?al. Experimental investigation and empirical modeling of the set and reset kinetics of Ag-GeS2 conductive bridging memories. 2012 4th IEEE Int. Memory Workshop, 1-4(2012). https://doi.org/10.1109/IMW.2012.6213680

[12] F. Longnoset?al. On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories. Solid-State Electron., 84, 155(2013).

[13] G. Palmaet?al. Interface engineering of Ag-GeS2-based conductive bridge RAM for reconfigurable logic applications. IEEE Trans. Electron Devices, 61, 793(2014).

[14] Y. Murakami, M. Wakaki. Observation of Ag photodoping phenomena in GeS2 chalcogenide glass films by spectroscopic ellipsometry and atomic force microscopy. Thin Solid Films, 542, 246(2013).

[15] M. Mitkova, M. N. Kozicki. Silver incorporation in Ge–Se glasses used in programmable metallization cell devices. J. Non-Crystalline Solids, 299–302, 1023(2002).

[16] H. Horton, K. L. Peatt, R. M. Lambert. Surface photo-oxidation and Ag deposition on amorphous GeS2. J. Phys.: Condens. Matter, 5, 9037(1993).

[17] S. I. Sadovnikov, E. Yu. Gerasimov. Direct TEM observation of the “acanthite α-Ag 2 S–argentite β-Ag2 S” phase transition in a silver sulfide nanoparticle. Nanoscale Adv., 1, 1581(2019).

[18] J. Lee, W. D. Lu. On-demand reconfiguration of nanomaterials: When electronics meets ionics. Adv. Mater., 30, 1702770(2018).

[19] F. Panet?al. Nonvolatile resistive switching memories-characteristics, mechanisms and challenges. Prog. Nat. Sci.: Mater. Int., 20, 1(2010).

[20] R. Waser, R. Dittmann, G. Staikov, K. Szot. Redox-based resistive switching memories - Nanoionic mechanisms, prospects, and challenges. Adv. Mater., 21, 2632(2009).

[21] K. Onlaor, T. Thiwawong, B. Tunhoo. Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone. Org. Electron., 15, 1254(2014).

[22] J. van den Hurk, V. Havel, E. Linn, R. Waser, I. Valov. Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures. Sci. Rep., 3, 2856(2013).

[23] E. Linn, S. Menzel, S. Ferch, R. Waser. Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications. Nanotechnology, 24, 384008(2013).

[24] E. Linn, R. Rosezin, C. Kügeler, R. Waser. Complementary resistive switches for passive nanocrossbar memories. Nat. Mater., 9, 403(2010).