Ultralow switching voltage and power consumption of GeS<sub>2</sub> thin film resistive switching memory

N. Lyapunov; C. H. Suen; C. M. Wong; Xiaodan Tang; Z. L. Ho; K. Zhou; X. X. Chen; H. M. Liu; Xiaoyuan Zhou; J. Y. Dai

doi:10.1142/S2010135X21500041

Journal of Advanced Dielectrics, Volume. 11, Issue 1, 2150004(2021)

Ultralow switching voltage and power consumption of GeS₂ thin film resistive switching memory

N. Lyapunov¹, C. H. Suen¹, C. M. Wong¹, Xiaodan Tang², Z. L. Ho¹, K. Zhou², X. X. Chen¹, H. M. Liu¹, Xiaoyuan Zhou^2、*, and J. Y. Dai^1、**

Author Affiliations

¹Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, P. R. China

²College of Physics, Chongqing University, Chongqing 401331, P. R. China

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N. Lyapunov, C. H. Suen, C. M. Wong, Xiaodan Tang, Z. L. Ho, K. Zhou, X. X. Chen, H. M. Liu, Xiaoyuan Zhou, J. Y. Dai. Ultralow switching voltage and power consumption of GeS₂ thin film resistive switching memory[J]. Journal of Advanced Dielectrics, 2021, 11(1): 2150004

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Paper Information

Category: Research Articles

Received: Jul. 21, 2020

Accepted: Jan. 19, 2021

Published Online: Nov. 1, 2022

The Author Email: Zhou Xiaoyuan (xiaoyuan2013@cqu.edu.cn), Dai J. Y. (jiyan.dai@polyu.edu.hk)

DOI:10.1142/S2010135X21500041

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology