Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 166(2024)

Uncooled InAsSb-based high-speed mid-wave infrared barrier detector

Chun-Yang JIA1,3, Gong-Rong DENG2, Peng ZHAO2, Zhi-Zhen ZHU4, Jun ZHAO2、**, and Yi-Yun ZHANG1,3、*
Author Affiliations
  • 1R&D Center for Solid-State Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 2Kunming Institute of Physics,Kunming 650223,China
  • 3Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
  • 4The first military representative office in Kunming area of the Military Representative Bureau of Land Forces in Chongqing,Kunming 650000,China
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    References(18)

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    [3] Maimon S, Wicks G W. nBn detector, an infrared detector with reduced dark current and higher operating temperature[J]. Applied Physics Letters, 89, 151109(2006).

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    [6] CHEN Dong-Qiong, WANG Hai-Peng, QIN Qiang et al. Research on dark current characteristics of InAsSb Barrier blocking infrared detector[J]. J. Infrared Millim.Waves, 41, 810-817(2022).

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    [9] Klem J F, Kim J K, Cich M J, Razeghi , M, Sudharsanan , R, Brown , G J et al. Comparison of nBn and nBp mid-wave barrier infrared photodetectors[C], 76081P(2010).

    [10] Deng G, Yang W, Gong X et al. High-performance uncooled InAsSb-based pCBn mid-infrared photodetectors[J]. Infrared Physics & Technology, 105, 103260(2020).

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    [12] Deng G, Song X, Fan M et al. Upside-down InAs/InAs1-xSbx type-II superlattice-based nBn mid-infrared photodetectors with an AlGaAsSb quaternary alloy barrier[J]. Optics express, 28, 1-13624(2020).

    [13] Steenbergen E H. InAsSb-based photodetectors[M]. Mid-infrared Optoelectronics, 415-453(2020).

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    [15] Huang E K, Hoffman D, Nguyen B-M et al. Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes[J]. Applied Physics Letters, 94, 53506(2009).

    [16] Kinch M A[M]. State-of-the-art infrared detector technology(2014).

    [17] Oehme M, Werner J, Kasper E et al. High bandwidth Ge p-i-n photodetector integrated on Si[J]. Applied Physics Letters, 89, 71117(2006).

    [18] Wang Y, Nordin L, Dev S et al. High-speed mid-wave infrared holey photodetectors[J]. Journal of Applied Physics, 133, 104501(2023).

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    Chun-Yang JIA, Gong-Rong DENG, Peng ZHAO, Zhi-Zhen ZHU, Jun ZHAO, Yi-Yun ZHANG. Uncooled InAsSb-based high-speed mid-wave infrared barrier detector[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 166

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    Paper Information

    Category: Research Articles

    Received: Jul. 5, 2023

    Accepted: --

    Published Online: Apr. 29, 2024

    The Author Email: Jun ZHAO (junzhao80@163.com), Yi-Yun ZHANG (yyzhang@semi.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2024.02.004

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