Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 166(2024)
Uncooled InAsSb-based high-speed mid-wave infrared barrier detector
Fig. 1. (a) X-ray diffraction spectra of nBn and pBn epitaxial wafers;(b) and (d) atomic force microscopic images for nBn and pBn epitaxial wafers;(c) and (e) optical and scanning electron micrographs of the fabricated circular GSG detector
Fig. 2. (a) Dark current density-voltage curves;(b) differential resistance and device area product (R0A) versus reverse bias;(c) Arrhenius plot of R0A at -400 mV for 90 μm nBn and pBn detector single-element chips at temperatures ranging from 77 K to 300 K
Fig. 3. (a) Dark current density-voltage curves of nBn and pBn devices with diameters ranging from 20 μm to 100 μm at room temperature;(b) variation curves of R0A with reverse bias;(c) R0A varied with mesa diameters for pBn and nBn devices at a reverse bias of 400 mV;(d) variation of (R0A)-1 over the perimeter-to-area ratio (P/A)
Fig. 4. (a) Junction capacitance versus reverse bias for nBn and pBn detectors with different diameters at room temperature;(b) variation in junction capacitance with mesa diameters at a reverse bias of 400 mV
Fig. 5. The normalized frequency response of 40 μm,50 μm,70 μm,80 μm,90 μm and 100 μm diameter nBn and pBn detectors with -3 V bias applied at 300 K
Fig. 6. nBn and pBn detectors with different sizes: (a) bias-dependent plot of -3 dB cutoff frequency;(b) variation of -3 dB cutoff frequency with mesa diameters at a reverse bias of 3 V
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Chun-Yang JIA, Gong-Rong DENG, Peng ZHAO, Zhi-Zhen ZHU, Jun ZHAO, Yi-Yun ZHANG. Uncooled InAsSb-based high-speed mid-wave infrared barrier detector[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 166
Category: Research Articles
Received: Jul. 5, 2023
Accepted: --
Published Online: Apr. 29, 2024
The Author Email: Jun ZHAO (junzhao80@163.com), Yi-Yun ZHANG (yyzhang@semi.ac.cn)