Research progress of monolithic integration master-oscillation power-amplifiers

Man-qing TAN; Dao-ming YOU; Wen-tao GUO; Wei-hua LIU

doi:10.37188/CO.2022-0022

[1] WANG L J, NING Y Q, QIN L, . Development of High Power Diode Laser[J]. Chinese Journal of Luminescence, 36, 1-19(2015).

[2] LEIDNER J P, MARCIANTE J R. Beam quality improvement in broad-area semiconductor lasers via evanescent spatial filtering[J]. IEEE Journal of Quantum Electronics, 48, 1269-1274(2012).

[3] GORDEEV N Y, PAYUSOV A, MAXIMOV M. Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels[J]. Semiconductors, 53, 1405-1408(2019).

[4] YUAN M Y, WANG W Q, WANG X Y, et al. Demonstration of an external cavity semiconductor mode-locked laser[J]. Optics Letters, 46, 4855-4858(2021).

[5] KHARAS D, PLANT J J, LOH W, et al. High-power (> 300 mW) on-chip laser with passively aligned silicon-nitride waveguide DBR cavity[J]. IEEE Photonics Journal, 12, 1-12(2020).

[6] LIU G Y, MI SH Y, YANG K, et al. 161 W middle infrared ZnGeP 2 MOPA system pumped by 300 W-class Ho: YAG MOPA system[J]. Optics Letters, 46, 82-85(2021).

[7] XU Y, SHENG Q, WANG P, et al. 1.5-kW all-fiberized Yb-doped MOPA laser at 1105 nm with near-diffraction-limited beam quality and narrow spectral width[J]. Optics Communications, 127893(2022).

[8] OGRODOWSKI L, FRIEDMANN P, GILLY J, et al. Tapered amplifiers for high-power MOPA setups between 750 nm and 2000 nm[J]. Proceedings of SPIE, 11301, 113011E(2020).

[9] FIEBIG C, BLUME G, KASPARI C, et al. 12 W high-brightness single-frequency DBR tapered diode laser[J]. Electronics letters, 44, 1253-1255(2008).

[10] PASCHKE K, BUGGE F, BLUME G, et al. High-power diode lasers at 1178 nm with high beam quality and narrow spectra[J]. Optics letters, 40, 100-102(2015).

[11] ANDREWS J R. Traveling‐wave amplifier made from a laser diode array[J]. Applied physics letters, 48, 1331-1333(1986).

[12] CARLSON N W, ABELES J H, BOUR D P, et al. Demonstration of monolithic, grating-surface-emitting laser master oscillator-cascaded power amplifier array[J]. IEEE Photonics technology letters, 2, 708-710(1990).

[13] SAHM A, BAUMGäRTNER S, HOFMANN J, et al. Miniaturized semiconductor MOPA laser source at 772 nm for the generation of UV laser light[J]. Proceedings of SPIE, 10535, 1053521(2018).

[14] PASCHKE K, BLUME G, POHL J, et al. Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector[J]. Proceedings of SPIE, 11262, 112620L(2020).

[15] BEYATLI E, SUMPF B, ERBERT G, et al. Efficient Tm: YAG and Tm: LuAG lasers pumped by 681 nm tapered diodes[J]. Applied Optics, 58, 2973-2980(2019).

[16] HANSEN A K, CHRISTENSEN M, NOORDEGRAAF D, et al. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system[J]. Proceedings of SPIE, 10088, 1008802(2017).

[17] LIANG M, LIU Q X, HU W T. 1550nm monolithic MOPA diode laser for Lidar applications[J]. Proceedings of SPIE, 11182, 1118207(2019).

[18] BLUME G, JEDRZEJCZYK D, POHL J, et al. 633-nm single-mode master-oscillator power-amplifier module[J]. Proceedings of SPIE, 10528, 105280D(2018).

[19] HOLLY C, HENGESBACH S, TRAUB M, et al. Simulation of spectral stabilization of high-power broad-area edge emitting semiconductor lasers[J]. Optics express, 21, 15553-15567(2013).

[20] KAUNGA-NYIRENDA S N, BULL S, LIM J J, et al. Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self-heating[J]. IET Optoelectronics, 8, 99-107(2014).

[21] WALPOLE J, KINTZER E, CHINN S, et al. High‐power strained‐layer InGaAs/AlGaAs tapered traveling wave amplifier[J]. Applied physics letters, 61, 740-742(1992).

[22] BEIL J A, SHIMOMOTO L, SWERTFEGER R B, et al. Improvements to tapered semiconductor MOPA laser design and testing[J]. Proceedings of SPIE, 10514, 105140U(2020).

[23] TIJERO J, BORRUEL L, VILERA M, et al. Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 µm[J]. Proceedings of SPIE, 10514, 105140U(2020).

[24] TIJERO J M G, BORRUEL L, VILERA M, et al. Analysis of the performance of tapered semiconductor optical amplifiers: role of the taper angle[J]. Optical and Quantum Electronics, 47, 1437-1442(2015).

[25] HUANG SH SH, ZHANG Y, LIAO Y P, et al. High-power single-spatial-mode gasb tapered laser around 2.0 μm with very small lateral beam divergence[J]. Chinese Physics Letters, 34, 084202(2017).

[26] CHEN ZH H, QU H W, MA X L, et al. High-brightness low-divergence tapered lasers with a narrow taper angle[J]. Chinese Physics Letters, 36, 084201(2019).

[27] LI J, QIU Y T, CAO Y H, et al. Numerical simulation and experiment of high brightness tapered lasers[J]. Optik, 158, 502-507(2018).

[28] YUAN Q H, JING H Q, LIU S P, . Influence of guided wave mode on output characteristics of tapered diode laser[J]. Chinese Journal of Lasers, 48, 0901001(2021).

[29] ZINK C, MAAßDORF A, FRICKE J, et al. Monolithic master oscillator tilted tapered power amplifier emitting 9.5 W at 1060 nm[J]. IEEE Photonics Technology Letters, 32, 59-62(2019).

[30] ZENG D SH, ZHONG L, LIU S P, . Analysis of Tapered Laser Amplifiers with Linear and Nonlinear Angle-Opening Strucutres[J]. Acta Optica Sinica, 40, 0314002(2020).

[31] YEO C I, JANG S J, YU J S, et al. 1.3um Laterally Tapered Ridge Waveguide DFB Lasers With Second-Order Cr Surface Gratings[J]. IEEE Photonics Technology Letters, 22, 1668-1670(2010).

[32] LIU L, QU H W, WANG Y F, et al. High-brightness single-mode double-tapered laser diodes with laterally coupled high-order surface grating[J]. Optics Letters, 39, 3231-3234(2014).

[33] LEI Y X, CHEN Y Y, GAO F, et al. High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithography[J]. Optics Communications, 443, 150-155(2019).

[34] Li X, Zhou Y, Xu H, et al. High-stability, high-pulse-energy MOPA laser system based on composite Nd: YAG crystal with multiple doping concentrations[J]. Optics & Laser Technology, 152, 108080(2022).

[35] BROX O, WIEDMANN J, SCHOLZ F, et al. Integrated 1060nm MOPA pump source for high-power green light emitters in display technology[J]. Proceedings of SPIE, 6909, 69091G(2008).

[36] GORDEEV N Y, PAYUSOV A S, MUKHIN I S, et al. Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance[J]. Semiconductors, 53, 200-204(2019).

[37] KAUL T, ERBERT G, MAAßDORF A, et al. Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs[J]. Semiconductor Science and technology, 33, 035005(2018).

[38] AHO A T, VIHERIäLä J, KOSKINEN M, et al. High-Power 1.5 μm Tapered Distributed Bragg Reflector Laser Diodes for Eye-Safe LIDAR[J]. IEEE Photonics Technology Letters, 32, 1249-1252(2020).

[39] BROX O, BUGGE F, GINOLAS A, et al. High-power ridge waveguide DFB and DFB-MOPA lasers at 1064 nm with a vertical farfield angle of 15°[J]. Proceedings of SPIE, 7616, 761610(2010).

[40] LIU Y, LIU Y, XIAO H D, . 638 nm narrow linewidth diode laser with a grating external cavity[J]. Chinese Optics, 13, 1249-1256(2020).

[41] SUN S M FAN J, XU L, . Progress of tapered semiconductor diode lasers[J]. Chinese Optics, 12, 48-58(2019).

[42] FRICKE J, WENZEL H, BROX O, et al. Surface Bragg gratings for high brightness lasers[J]. Proceedings of SPIE, 11301, 113011H(2020).

[43] LEI Y, CHEN Y, GAO F, et al. 996 nm high-power single-longitudinal-mode tapered gain-coupled distributed feedback laser diodes[J]. Applied Optics, 58, 6426-6432(2019).

[44] SPREEMANN M, LICHTNER M, RADZIUNAS M, et al. Measurement and simulation of distributed-feedback tapered master-oscillator power amplifiers[J]. IEEE Journal of Quantum Electronics, 45, 609-616(2009).

[45] [45] HELAL M, NYIRENDAKAUNGA S, BULL S, et al. .Beam quality degradation processes in tapered lasers DBR tapered lasers[C]. Proceedings of 2017 IEEE High Power Diode Lasers Systems Conference (HPD), IEEE, 2017: 2526.

[46] CHRISTENSEN M, ZINK C, JAMAL M T, et al. Measuring the sensitivity to optical feedback of single-frequency high-power laser diodes[J]. Journal of the Optical Society of America B, 38, 885-892(2021).

[47] ZENG D SH, ZHONG L, LIU S P, et al. Analysis of the time domain characteristics of tapered semiconductor lasers[J]. Journal of Semiconductors, 41, 032305(2020).

[48] [48] RADZIUNAS M. Modeling Simulations of Edgeemitting Broadarea Semiconduct Lasers Amplifiers[M]WYRZYKOWSKI R, DEELMAN E, DONGARRA J, et al. Parallel Processing Applied Mathematics. Cham: Springer, 2016: 269276.

[49] MOURIKIS C, BLUME G, MAAßDORF A, et al. Coherent beam combining progress on diode lasers and tapered amplifiers at 808 nm[J]. Proceedings of SPIE, 11983, 119830D(2022).

[50] JEDRZEJCZYK D, GüTHER R, PASCHKE K, et al. Efficient high-power frequency doubling of distributed Bragg reflector tapered laser radiation in a periodically poled MgO-doped lithium niobate planar waveguide[J]. Optics Letters, 36, 367-369(2011).

[51] MÜLLER A, FRICKE J, BUGGE F, et al. DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited, narrowband emission at 1030 nm[J]. Applied Physics B, 122, 87(2016).

[52] SUMPF B, THEURER L S, MAIWALD M, et al. 783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power[J]. Appl. Opt., 60, 5418-5423(2021).

[53] SUMPF B, THEURER L S, MAIWALD M, et al. Narrow spectral line-width 785 nm DBR tapered lasers with 7 W output power[J]. Proceedings of SPIE, 11705, 117050O(2021).

[54] PABOEUF D, LUCAS-LECLIN G, GEORGES P, et al. Narrow-line coherently combined tapered laser diodes in a Talbot external cavity with a volume Bragg grating[J]. Applied Physics Letters, 93, 211102(2008).

[55] MÜLLER A, MAIWALD M, SUMPF B. Compact diode laser-based dual-wavelength master oscillator power amplifier at 785 nm[J]. IEEE Photonics Technology Letters, 31, 1120-1123(2019).

[56] MÜLLER A, MAIWALD M, SUMPF B. Micro-integrated dual-wavelength ridge-waveguide master oscillator power amplifier with an optical output power of 0.5 W at 785 nm[J]. Proceedings of SPIE, 11301, 113011F(2020).

[57] [57] DUPT F, GOMEZ C, FTIN C, et al. .Directly modulated high power semiconduct optical amplifier[C]. Proceedings of 2018 International Topical Meeting on Microwave Photonics (MWP), IEEE, 2018: 14.

[58] PÉREZ-SERRANO A, VILERA M, TIJERO J M G, et al. A voltage driven traveling-wave model for the simulation of an integrated three-section MOPA under static and modulated operation[J]. IEEE Journal of Quantum Electronics, 54, 1-10(2018).

[59] PÉREZ-SERRANO A, TIJERO J M G, BALLE S, et al. Numerical analysis of the modulation dynamics in an integrated three-section MOPA using a voltage driven traveling-wave model[J]. IEEE Journal of Selected Topics in Quantum Electronics, 25, 1-10(2019).

[60] WANG Y, ZHANG X, TONG C, et al. High power femtosecond semiconductor lasers based on saw-toothed master-oscillator power-amplifier system with compressed ASE[J]. Optics Express, 28, 7108-7115(2020).

[61] LI J, KUKSENKOV D V, LIU W, et al. Wavelength tunable high-power single-mode 1060-nm DBR lasers[J]. Proceedings of SPIE, 8277, 82771L(2012).

[62] JENSEN O B, SUMPF B, ERBERT G, et al. Widely tunable high-power tapered diode laser at 1060 nm[J]. IEEE Photonics Technology Letters, 23, 1624-1626(2011).

[63] TAWFIEQ M, FRICKE J, STöLMACKER C, et al. Spatial filtering of a six-wavelength DBR-RW laser in a MOPA system[J]. Applied Optics, 60, 1864-1870(2021).

[64] VU T N, TIEN T Q, SUMPF B, et al. 16.3 W Peak-Power Pulsed All-Diode Laser Based Multi-Wavelength Master-Oscillator Power-Amplifier System at 964 nm[J]. Applied Sciences, 11, 8608(2021).

[65] LI Q, WAN M, LU Y H, et al. 1.9 W single-frequency, grating external-cavity tapered laser with narrow linewidth[J]. Proceedings of SPIE, 11170, 1117033(2019).

[66] TAWFIEQ M, MüLLER A, FRICKE J, et al. 5.5 nm wavelength-tunable high-power MOPA diode laser system at 971 nm[J]. Proceedings of SPIE, 10553, 105531F(2018).

[67] LIN X D, ZHONG Z Q, WANG H P. Characteristics of Intermittent Chaos in a Monolithically Integrated Semiconductor Laser[J]. Acta Photonica Sinica, 47, 0514004(2018).

[68] KUANG S Q, GUO X S FENG Y L, . Research progress of optical chaos in semiconductor laser systems[J]. Chinese Optics, 14, 1133-1145(2021).

[69] PNIEL E, DALIN B, GOLOD S, et al. Types of filamentation in tapered diode amplifiers: their causes and features[J]. Optical and Quantum Electronics, 47, 1535-1544(2015).

[70] SUJECKI S, BORRUEL L, WYKES J, et al. Nonlinear properties of tapered laser cavities[J]. IEEE Journal of selected topics in quantum electronics, 9, 823-834(2003).

[71] ODRIOZOLA H, TIJERO J, BORRUEL L, et al. Beam properties of 980-nm tapered lasers with separate contacts: Experiments and simulations[J]. IEEE journal of quantum electronics, 45, 42-50(2008).

[72] [72] ODRIOZOLA H, TIJERO J, ESQUIVIAS I, et al. .Design of 1060 nm tapered lasers with separate contacts C]. Proceedings of 2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), IEEE, 2008: 6768.

[73] ESQUIVIAS I, ODRIOZOLA H, TIJERO J, et al. Simulation of high brightness tapered lasers[J]. Proceedings of SPIE, 7616, 76161E(2010).

[74] MEINECKE S, DRZEWIETZKI L, WEBER C, et al. Ultra-short pulse generation in a three section tapered passively mode-locked quantum-dot semiconductor laser[J]. Scientific Reports, 9, 1-14(2019).

[75] ZHU H Q, ZHU H, YU CH R, et al. Modeling and improving the output power of terahertz master-oscillator power-amplifier quantum cascade lasers[J]. Optics Express, 28, 23239-23250(2020).

[76] BUGGE F, BEGE R, BLUME G, et al. Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm[J]. Journal of Crystal Growth, 491, 31-35(2018).

[77] LI J, QIU Y T, CAO Y H. High Brightness Tapered Diode Laser[J]. Chinese Journal of Luminescence, 37, 990-995(2016).

[78] SUN S M, FAN J, XU L, . Design and optimization of 976 nm tapered semiconductor laser[J]. Infrared and Laser Engineering, 46, 1205004(2017).

[79] DITTMAR F, KLEHR A, SUMPF B, et al. 9-W output power from an 808-nm tapered diode laser in pulse mode operation with nearly diffraction-limited beam quality[J]. IEEE Journal of Selected Topics in Quantum Electronics, 13, 1194-1199(2007).

[80] FAUGERON M, TRAN M, PARILLAUD O, et al. High-power tunable dilute mode DFB laser with low RIN and narrow linewidth[J]. IEEE photonics technology letters, 25, 7-10(2012).

[81] TIJERO J M G, ODRIOZOLA H, BORRUEL L, et al. Enhanced brightness of tapered laser diodes based on an asymmetric epitaxial design[J]. IEEE Photonics Technology Letters, 19, 1640-1642(2007).

[82] ZHANG J, MA X L, ZHOU X Y, et al. Mode engineering of semiconductor lasers with vertical periodic layered structures[J]. Journal of Physics D:Applied Physics, 55, 065102(2021).

[83] WANG L J, LI ZH, TONG C ZH, et al. Near-diffraction-limited Bragg reflection waveguide lasers[J]. Applied Optics, 57, F15-F21(2018).

[84] MA X L, QU H, QI A, et al. High power tapered lasers with optimized photonic crystal structure for low divergence and high efficiency[J]. Semiconductor Science and Technology, 33, 045010(2018).

[85] ZHOU X Y, MA X L, QU H W, et al. Extremely high-brightness tapered photonic crystal diode laser with narrow-emitting aperture[J]. Applied Physics Express, 12, 094004(2019).

[86] LI Y, DU W CH, KUN ZH, et al. High-brightness tapered laser diodes with photonic crystal structures[J]. Proceedings of SPIE, 10697, 106974Y(2017).

[87] PATEL S J, JARIWALA A, PANCHAL C, et al. Suppression of Optical Feedback in Laser Diodes Using Multilayered Broad-band Ultra-low Reflective Facets-coating[J]. Journal of Nano- and Electronic Physics, 12, 02030(2020).

[88] LIU C C, LIN N, XIONG C, . Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities[J]. Chinese Optics, 13, 203-216(2020).

[89] WANG Y CH, QU H W, WANG Y F, et al. Radio Frequency Plasma-Enhanced Reactive Magnetron Sputtering Deposition of α-SiN x on Photonic Crystal—Laser Diodes for Facet Passivation[J]. ACS omega, 4, 20205-20211(2019).

[90] FAN ZH B, CHEN Z M, ZHOU X, . Recent advances in silicon nitride-based photonic devices and applications[J]. Chinese Optics, 14, 998-1018(2021).

[91] FIEBIG C, EPPICH B, PASCHKE K, et al. High-brightness 980-nm tapered laser—Optimization of the laser rear facet[J]. IEEE Photonics Technology Letters, 22, 341-343(2010).

[92] SUMPF B, HASLER K-H, ADAMIEC P, et al. 1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality[J]. Proceedings of SPIE, 7230, 72301E(2009).

[93] [93] MLLER A, ZINK C, GINOLAS A, et al. .10.5 W central lobe output power obtained with an efficient 1030 nm DBR tapered diode laser C]. Proceedings of 2017 IEEE High Power Diode Lasers Systems Conference (HPD), IEEE, 2017: 6162.

[94] MÜLLER A, ZINK C, FRICKE J, et al. 1030nm DBR tapered diode laser with up to 16 W of optical output power[J]. Proceedings of SPIE, 10123, 101231B(2017).

[95] VILERA M, PÉREZ-SERRANO A, TIJERO J, et al. Emission Characteristics of a 1.5um All-Semiconductor Tapered Master Oscillator Power Amplifier[J]. IEEE Photonics Journal, 7, 1500709(2015).

[96] LI J, MA X Y, LIU Y Y, . High-Power Ridge-Waveguide Tapered Diode Lasers at 980nm[J]. Journal of semiconductors, 28, 645-650(2007).

[97] MAN Y X, ZHONG L, MA X Y, . Characteristic Analysis of 975 nm Conical Semiconductor Laser with Separated Electrode[J]. Chinese Journal of Lasers., 48, 1701005(2021).

[98] PASCHKE K, SUMPF B, DITTMAR F, et al. Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W[J]. IEEE Journal of selected topics in quantum electronics, 11, 1223-1227(2005).

[99] [99] ALBRODT P, HANNA M, MON F, et al. .Coherent beam combining of highpower tapered amplifiers[C]. Proceedings of 2017 IEEE High Power Diode Lasers Systems Conference (HPD), IEEE, 2017: 1516.

[100] ALBRODT P, NIEMEYER M, CRUMP P, et al. Coherent beam combining of high power quasi continuous wave tapered amplifiers[J]. Optics Express, 27, 27891-27901(2019).

[101] JEDRZEJCZYK D, BROX O, BUGGE F, et al. High-power distributed-feedback tapered master-oscillator power amplifiers emitting at 1064 nm[J]. Proceedings of SPIE, 7583, 758317(2010).

[102] FIEBIG C, PEKAREK S, PASCHKE K, et al. High-brightness distributed-Bragg-reflector tapered diode lasers: pushing your application to the next level[J]. Proceedings of SPIE, 7918, 79180R(2011).

[103] SUMPF B, THEURER L S, MAIWALD M, et al. Comparison of electro-optical, spectral, and spatial beam parameters of 785nm DBR tapered lasers with different grating lengths[J]. Proceedings of SPIE, 12021, 120210H(2022).

[104] AHO A, VIHERIäLä J, VIRTANEN H, et al. High peak power laser diodes at 1.5 um with integrated wavelength locking element (Conference Presentation)[J]. Proceedings of SPIE, 11262, 112620E(2020).

[105] MüLLER A, ZINK C, FRICKE J, et al. Efficient, high brightness 1030 nm DBR tapered diode lasers with optimized lateral layout[J]. IEEE Journal of Selected Topics in Quantum Electronics, 23, 1-7(2017).

[106] LI Y, ZHOU K, HE L, et al. Structural design of mode propagation interface for tapered laser diodes[J]. Proceedings of SPIE, 11717, 117172H(2020).

[107] FIEBIG C, FEISE D, EPPICH B, et al. Tapered diode laser with reverse bias absorber section[J]. IEEE Photonics Technology Letters, 21, 1755-1757(2009).

[108] KASPARI C, BLUME G, FEISE D, et al. Optimisation of 660 nm high-power tapered diode lasers[J]. IET optoelectronics, 5, 121-127(2011).

[109] [109] ZINK C, MAIWALD M, WENZEL H, et al. .Monolithic master oscillat with tapered power amplifier diode laser at 1060 nm with additional control section f high power operation[C]. Proceedings of the European Conference on Lasers ElectroOptics 2019, OSA, 2019: cb_3_1.

[110] [110] CAMPBELL J, LABRECQUE M, RENNER D, et al. .2.7 W continuous wave nearlydiffractionlimited output 1550 nm tapered laser diode amplifier[C]. Proceedings of the 27th International Semiconduct Laser Conference (ISLC), IEEE, 2021: 12.

[111] SUMPF B, PASCHKE K. Spectrally stabilized high-power high-brightness DBR-tapered lasers in the VIS and NIR range[J]. Proceedings of SPIE, 10518, 1051817(2018).

[112] SUMPF B, HASLER K H, ADAMIEC P, et al. High-brightness quantum well tapered lasers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 15, 1009-1020(2009).