Design and Fabrication of Antireflective Film for Weak Ripple Superluminescent Diode

Daoming You; Manqing Tan; Xiaofeng Guo; Wentao Guo; Yingchun Cao; Wenbin Chen

doi:10.3788/CJL220983

Chinese Journal of Lasers, Volume. 50, Issue 13, 1303101(2023)

Design and Fabrication of Antireflective Film for Weak Ripple Superluminescent Diode

Daoming You^1,2, Manqing Tan^1,2、*, Xiaofeng Guo¹, Wentao Guo¹, Yingchun Cao¹, and Wenbin Chen^1,3

¹State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(12)

Fig. 1. Main steps of FDTD simulation

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Fig. 2. Simulation model of SLD with tilt facet. (a) Schematic of physical model; (b) 3D structure and simplified facet

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Fig. 3. PWM designed single-layer AR film reflectivity values with comparison between calculated values by FDTD method and designed values by PWM at tilt angles of 1°, 5°, and 10° shown in inset. (a) Reflectance curve of cavity surface type-1; (b) reflectance curve of cavity surface type-2

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Fig. 4. SLD reflection curves of single-layer and double-layer AR films at tilt angle of 5°. (a) Cavity surface type-1; (b) cavity surface type-2

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Fig. 5. Reflectivity of AR films versus film parameters at different tilt angles. (a) Single-layer film; (b) double-layer film

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Fig. 6. Comparison of reflection characteristics of AR films before and after optimization. (a) Single-layer films; (b) double-layer films

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Fig. 7. Reflectivity curves of films on accompany wafer. (a) Traditional AR films designed by PWM; (b) optimal AR films

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Fig. 8. Spectra of SLD chips before and after double-layer AR film optimization with magnified spectra at 1310 nm shown in inset

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Fig. 9. Parameter statistics of SLD chips before and after film optimization in which points represent SLD chip parameters and bar charts represent average values of parameters. (a) Ripple index; (b) modulation index; (c) reflectivity

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Fig. 10. PIV characteristic curves of SLD chips coated with optimized double-layer AR films

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Table 1. Structural parameters of simulation model and film

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Table 1. Structural parameters of simulation model and film

Parameter	Value
Core-layer thickness	0.1 $μ m$ for type-1 0.5 $μ m$ for type-2
Core layer refractive index（n_core）	3.4902-3.6000
Cladding refractive index（n_clad）	3.4902
Refractive index difference（ $Δ n$ ）	3%
Excitation wavelength	1310 nm
Tilt angle	1°-10°
Refractive index of single-layer film（ $n^{'}$ ）	1.879
Thickness of single-layer film（ $l$ ）	174.3 nm
Refractive index of double-layer film（ $n_{1}$ ）	2.72
Thickness of first film（ $l_{1}$ ）	120.4 nm
Refractive index of double-layer film（ $n_{2}$ ）	1.45
Thickness of second film（ $l_{2}$ ）	225.9 nm

Table 2. FDTD simulation parameters
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Table 2. FDTD simulation parameters
Parameter Content
Mesh type Non-uniform
Mesh accuracy 3
Minimum mesh step /μm 0.00025
Boundary condition PML in x，y，and z directions
Number of PMLs 8

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Daoming You, Manqing Tan, Xiaofeng Guo, Wentao Guo, Yingchun Cao, Wenbin Chen. Design and Fabrication of Antireflective Film for Weak Ripple Superluminescent Diode[J]. Chinese Journal of Lasers, 2023, 50(13): 1303101

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