Chinese Journal of Lasers, Volume. 50, Issue 14, 1403001(2023)
Effect of Different Crystalline Ge Film Bonding Layers on Properties of InGaAs/Si Avalanche Photodiodes
Figures & Tables(21)
Fig. 2. Current-voltage curves under different bonding layer thicknesses when T=300 K,P=-20 dBm,and λ=1550 nm. (a) A-APD;(b) Poly-APD
Fig. 3. Vbr versus bonding layer thickness when T=300 K,P=-20 dBm,and λ=1550 nm. (a) A-APD; (b) Poly-APD
Fig. 4. Optical current versus bonding layer thickness at 0.95Vbr when T=300 K,P=-20 dBm,and λ=1550 nm. (a) A-APD;(b) Poly-APD
Fig. 5. Recombination rates under different bonding layer thicknesses when T=300 K,P=-20 dBm,λ=1550 nm, and V=0.95Vbr with recombination rate in bond layer shown in inset. (a) A-APD ; (b) Poly-APD
Fig. 6. Carrier concentrations of A-APDs under different bonding layer thicknesses when T=300 K,P=-20 dBm,λ=1550 nm, and V=0.95Vbr with carrier concentration in bond layer shown in inset. (a) Electron concentration; (b) hole concentration; (c) electron concentration in absorption layer; (d) electron concentration in multiplication layer
Fig. 7. Carrier concentrations of Poly-APDs under different bonding layer thicknesses when T=300 K,P=-20 dBm,λ=1550 nm, and V=0.95Vbr with carrier concentration in bond layer shown in inset. (a) Electron concentration; (b) hole concentration; (c) electron concentration in absorption layer; (d) electron concentration in multiplication layer
Fig. 8. Energy bands of A-APDs under different bonding layer thicknesses when T=300 K,P=-20 dBm,and λ=1550 nm. (a) Conduction band at balanced bias; (b) valence band at balanced bias; (c) conduction band at 0.95Vbr; (d) valence band at 0.95Vbr
Fig. 9. Energy bands of Poly-APDs under different bonding layer thicknesses when T=300 K,P=-20 dBm,and λ=1550 nm. (a) Conduction band at balanced bias; (b) valence band at balanced bias; (c) conduction band at 0.95Vbr; (d) valence band at 0.95Vbr
Fig. 10. Charge concentrations under different bonding layer thicknesses when T=300 K,P=-20 dBm,λ=1550 nm, and V=0.95Vbr. (a) A-APD; (b) Poly-APD
Fig. 11. Avalanche impact ionization rates under different bonding layer thicknesses when T=300 K,P=-20 dBm,λ=1550 nm, and V=0.95Vbr with avalanche impact ionization rate in bond layer shown in inset. (a) A-APD; (b) Poly-APD
Fig. 12. Carrier impact ionization coefficients of A-APDs under different bonding layer thicknesses when T=300 K,P=-20 dBm,λ=1550 nm, and V=0.95Vbr with impact ionization coefficient in multiplication layer shown in inset. (a) Electron impact ionization coefficient; (b) hole impact ionization coefficient
Fig. 13. Carrier impact ionization coefficients of Poly-APDs under different bonding layer thicknesses when T=300 K,P=-20 dBm, λ=1550 nm, and V=0.95Vbr with hole impact ionization coefficient in absorption layer shown in inset. (a) Electron impact ionization coefficient; (b) hole impact ionization coefficient
Fig. 14. Electrical field distributions under different bonding layer thicknesses when T=300 K,P=-20 dBm,λ=1550 nm, and V=0.95Vbr. (a) A-APD with electrical field distribution in multiplication layer shown in inset; (b) Poly-APD with electrical field distribution in absorption layer shown in inset
Fig. 15. Gains under different bonding layer thicknesses when T=300 K,P=-20 dBm,and λ=1550 nm. (a) A-APD; (b) Poly-APD
Fig. 16. Gain versus bonding layer thickness when T=300 K,P=-20 dBm,λ=1550 nm, and V=Vbr. (a) A-APD; (b) Poly-APD
Fig. 17. 3 dB bandwidths under different bonding layer thicknesses when T=300 K,P=-20 dBm,and λ=1550 nm. (a) A-APD;(b) Poly-APD
Fig. 18. Carrier velocities of A-APDs under different bonding layer thicknesses when T=300 K,P=-20 dBm,λ=1550 nm, and V=0.95Vbr with carrier velocity in bonding layer shown in inset. (a) Electron velocity; (b) hole velocity
Fig. 19. Carrier velocities of Poly-APDs under different bonding layer thicknesses when T=300 K,P=-20 dBm,λ=1550 nm, and V=0.95Vbr with carrier velocity in bonding layer shown in inset. (a) Electron velocity; (b) hole velocity
Fig. 20. Gain bandwidth products under different bonding layer thicknesses when T=300 K,P=-20 dBm,and λ=1550 nm. (a) A-APD; (b) Poly-APD
Table 1. Material parameters of InGaAs/Si APD device[29-32]
View tableTable 1. Material parameters of InGaAs/Si APD device[29-32]
Parameter i-InGaAs a-Ge Poly-Ge Thickness /nm 1200 0.5-20.0 0.5-20.0 Permittivity 13.9 16 16 Electron affinity /eV 4.5 4.17 4.17 Lifetime /s 1.0×10-8（electron） 1.0×10-8（hole） 1.0×10-8（electron） 1.0×10-8（hole） 1.0×10-8（electron） 1.0×10-8（hole） Band gap /eV 0.75 1.1 0.7 Mobility /（cm2·V-1·s-1） 14200（electron） 400（hole） 20（electron） 15（hole） 1416（electron） 690（hole） Band tail density of states /（cm-3·eV-1） - 2.0×1021 1.0×1016 Dopant concentration /cm-3 5×1015 5×1015 5×1015 Gaussian density of states /cm-3 - 1.0×1017 1.0×1010 Saturation velocity /（cm·s-1） 1.5×107（electron） 7.7×106（hole） 1.0×107（electron） 9.0×106（hole） 1.0×107（electron） 9.0×106（hole）
Tools
Get Citation
Copy Citation Text
Shiyi Bao, Haolong Mu, Jinrong Zhou, Zhiwei Huang, Shaoying Ke. Effect of Different Crystalline Ge Film Bonding Layers on Properties of InGaAs/Si Avalanche Photodiodes[J]. Chinese Journal of Lasers, 2023, 50(14): 1403001
Paper Information
Category: Materials
Received: Aug. 5, 2022
Accepted: Sep. 18, 2022
Published Online: Jul. 10, 2023
The Author Email: Ke Shaoying (syke@mnnu.edu.cn)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20