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Chinese Journal of Lasers, Volume. 50, Issue 14, 1403001(2023)

Effect of Different Crystalline Ge Film Bonding Layers on Properties of InGaAs/Si Avalanche Photodiodes

Shiyi Bao, Haolong Mu, Jinrong Zhou, Zhiwei Huang, and Shaoying Ke*
Author Affiliations
  • College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, Fujian, China
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    Article index updated: Mar. 10, 2025

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    Shiyi Bao, Haolong Mu, Jinrong Zhou, Zhiwei Huang, Shaoying Ke. Effect of Different Crystalline Ge Film Bonding Layers on Properties of InGaAs/Si Avalanche Photodiodes[J]. Chinese Journal of Lasers, 2023, 50(14): 1403001

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    Paper Information

    Category: Materials

    Received: Aug. 5, 2022

    Accepted: Sep. 18, 2022

    Published Online: Jul. 10, 2023

    The Author Email: Ke Shaoying (syke@mnnu.edu.cn)

    DOI:10.3788/CJL221108

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology