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Semiconductor Optoelectronics, Volume. 45, Issue 2, 222(2024)

Influence of Ionization Effect on Gain of Electron Multiplying Layer in EBCMOS

CHEN Wene1, CHEN Weijun1, SONG De1, JIAO Gangcheng2, LI Ye1, ZHAO Peng1, LI Shuhan1, WANG Chongxiao1, LIANG Rongxuan1, and YUE Jipeng1
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    CHEN Wene, CHEN Weijun, SONG De, JIAO Gangcheng, LI Ye, ZHAO Peng, LI Shuhan, WANG Chongxiao, LIANG Rongxuan, YUE Jipeng. Influence of Ionization Effect on Gain of Electron Multiplying Layer in EBCMOS[J]. Semiconductor Optoelectronics, 2024, 45(2): 222

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    Received: Dec. 18, 2023

    Accepted: --

    Published Online: Aug. 14, 2024

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2023121801

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology