Semiconductor Optoelectronics, Volume. 45, Issue 2, 222(2024)

Influence of Ionization Effect on Gain of Electron Multiplying Layer in EBCMOS

CHEN Wene1, CHEN Weijun1, SONG De1, JIAO Gangcheng2, LI Ye1, ZHAO Peng1, LI Shuhan1, WANG Chongxiao1, LIANG Rongxuan1, and YUE Jipeng1
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  • 1[in Chinese]
  • 2[in Chinese]
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    The Monte Carlo simulation method was employed to investigate the influence of ionization effects resulting from high-energy electrons bombarding a semiconductor in electron bombardment complementary metal-oxide-semiconductor (EBCMOS) imaging devices on both the charge collection efficiency and gain of the electron multiplying layer. Further, a theoretical analysis was conducted to examine the effects of incident electron energy, doping concentration in the p-type substrate layer, thickness of the electron multiplying layer, and passivation layer on the charge collection efficiency and gain of the multiplying layer. The analysis revealed that increasing the incident electron energy (up to 4keV), reducing the thickness of both the electron multiplying and passivation layers, and lowering the doping concentration in the p-type substrate layer are all beneficial approaches to improve the charge collection efficiency and increase the multiplying layer gain to obtain high-gain EBCMOS devices

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    CHEN Wene, CHEN Weijun, SONG De, JIAO Gangcheng, LI Ye, ZHAO Peng, LI Shuhan, WANG Chongxiao, LIANG Rongxuan, YUE Jipeng. Influence of Ionization Effect on Gain of Electron Multiplying Layer in EBCMOS[J]. Semiconductor Optoelectronics, 2024, 45(2): 222

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    Paper Information

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    Received: Dec. 18, 2023

    Accepted: --

    Published Online: Aug. 14, 2024

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2023121801

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