Opto-Electronic Engineering, Volume. 50, Issue 7, 230086(2023)

Inverse-designed silicon-based on-chip power splitters

Hansi Ma1,2, Te Du1, Xinpeng Jiang1, and Junbo Yang1、*
Author Affiliations
  • 1Center of Material Science, National University of Defense Technology, Changsha, Hunan 410073, China
  • 2Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha, Hunan 410073, China
  • show less
    Figures & Tables(12)
    Summary of the inverse-designed power splitters. A: The power splitter with four channels [62]; B: The power splitter with a split ratio of 1:2:1[63]; C: The power splitter for the TE0, TE1, and TE2 modes [70]; D: The power splitter with 700 nm working bandwidth [71]; E: The tunable power splitter [72]
    Summary of the forward design and inverse design methods
    Structures and results of the single-device power splitters with multiple channels. (a) and (b) The 1 × 2 power splitter[75, 79]; (c) The 1 × 3 power splitter [86]; (d) The 1 × 4 power splitter [62]
    Structures and results of the assembled power splitters with multiple channels. (a) The 1 × 4 power splitter assembled by three 1 × 2 power splitters with different output directions [60]; (b) The 1 × 6 power splitter assembled by one 1 × 2 power splitter and two 1 × 3 power splitters [86]
    Structures and results of the power splitters with arbitrary split ratios. (a) The 1 × 3 power splitter with a split ratio of 1:2:1[87]; (b) The 1 × 2 power splitters with the split ratios of 1:1, 1:2, and 1:3 [63]; (c) The 1 × 2 power splitter with the split ratios of 9:1, 8:2, 7:3, and 6:4 [88]
    Forward and inverse neural network modeling [89]
    Structures and results of the single-device power splitters with multiple modes. (a) The two-TE-mode power splitter [90]; (b) The three-TE-mode power splitter [70]; (c) The four-mode and dual-polarization power splitter [93]
    Structures and results of the assembled power splitter with multiple modes [94]. (a) The SEM images; (b) The simulated light field distributions; (c) The measured transmission spectra
    Structures and results of 1×4 power splitter working at 2 μm spectral range [95]
    Structures and results of the broadband power splitters. (a) The 1×4 power splitter with 300 nm working bandwidth [96]; (b) The 1×2 power splitter with 445 nm working bandwidth [97]; (c) The 1×2 power splitter with 550 nm working bandwidth [98]; (d) The 1×2 power splitter with 700 nm working bandwidth [71]
    Structures and results of the combined-functional power splitters. (a) The power splitter with different output directions [86]; (b) The power splitter with the arbitrary input waveguides [100]; (c) The power splitter with the mode conversion[101]; (d) The power splitter with the mode conversion and wavelength demultiplexing [102]
    Structures and results of the tunable power splitters. (a) The GST-based power splitter with the reconfigured power ratios [72]; (b) The GSST-based power splitter with the straight passing and power splitting [103]; (c) The Sb2Se3-based power splitter with the reconfigured power ratios [104]
    Tools

    Get Citation

    Copy Citation Text

    Hansi Ma, Te Du, Xinpeng Jiang, Junbo Yang. Inverse-designed silicon-based on-chip power splitters[J]. Opto-Electronic Engineering, 2023, 50(7): 230086

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Article

    Received: Apr. 17, 2023

    Accepted: Jun. 9, 2023

    Published Online: Sep. 25, 2023

    The Author Email:

    DOI:10.12086/oee.2023.230086

    Topics