Acta Optica Sinica, Volume. 41, Issue 21, 2125001(2021)
Near-Infrared Integrated Photodetector Based on PdSe2Nanowires Film/Si Heterojunction
Fig. 1. Diagram of PdSe2 NWs film synthesis procedure and characterization. (a) Schematic of the procedures for synthesis and assembly of PdSe2 NWs film; (b) digital photograph of quartz and SiO2/Si substrates with and without Pd NWs film; (c) SEM image of patterned Pd NWs film atop Si/SiO2 substrate, the right panel shows an enlarged SEM image at the boundary between SiO2 and Si
Fig. 2. Characterization of Pd NWs and PdSe2NWs. (a) SEM image of Pd NWs film and the inset shows the diameter distribution; (b) SEM image of the PdSe2 NWs film and the inset shows the diameter distribution; (c) FETEM image of single PdSe2 NW and elemental mapping images of Pd and Se elements; (d) HRTEM image of PdSe2 NW;(e) magnified HRTEM image of PdSe2 NW; (f) Raman spectrum of the PdSe2 NW
Fig. 3. Schematic of fabrication procedure of the PdSe2 NWs film/Si heterojunction integrated photodetector
Fig. 4. Photoelectric response properties of the device. (a) I-V curve of a typical heterojunction device measured in darkness and digital graph of the integrated device; (b) I-V curves of the device under different light power; (c) current-time (I-T) curves of the device under different light power; (d) photovoltage as a function of light intensity, the inset shows the fitting curve of photocurrent with light intensity; (e) photo-response upon five hundreds of cycles of operation; (f) I-T curve under the frequency of 20 kHz; (g) noise equivalent power diagram
Fig. 5. Analysis of energy band structure and spectral response. (a) Energy band diagram at zero bias; (b) normalized photoresponse as a function of incident light wavelength (200-1300 nm); (c) photoresponse under 1300 nm illumination; (d) absorption spectra of silicon, PdSe2 NWs film, and heterojunction device
Fig. 6. Uniformity analysis of the integrated device. (a) Currents in dark and light irradiation for each device unit;(b) 2D contrast map of dark current; (c) 2D contrast map of photo current; (d) 3D diagram of the current On/Off ratio
Fig. 7. Image sensor application. (a) Working mechanism of the image sensor based on the heterojunction device;(b) 2D current contrast diagram of detector array to letter images
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Yanan Lin, Yadong Wu, Haiyang Cheng, Yang Lu, Chao Xie, Linbao Luo. Near-Infrared Integrated Photodetector Based on PdSe2Nanowires Film/Si Heterojunction[J]. Acta Optica Sinica, 2021, 41(21): 2125001
Category: OPTOELECTRONICS
Received: Feb. 22, 2021
Accepted: May. 17, 2021
Published Online: Oct. 29, 2021
The Author Email: Lu Yang (yanglu@hfut.edu.cn), Xie Chao (chaoxie@ahu.edu.cn), Luo Linbao (luolb@hfut.edu.cn)