Acta Optica Sinica, Volume. 41, Issue 21, 2125001(2021)

Near-Infrared Integrated Photodetector Based on PdSe2Nanowires Film/Si Heterojunction

Yanan Lin1, Yadong Wu3, Haiyang Cheng1, Yang Lu3、***, Chao Xie2、**, and Linbao Luo1、*
Author Affiliations
  • 1School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230601, China
  • 2School of Electronics & Information Engineering, Anhui University, Hefei, Anhui 230601, China
  • 3School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, Anhui 230601, China
  • show less
    Figures & Tables(7)
    Diagram of PdSe2 NWs film synthesis procedure and characterization. (a) Schematic of the procedures for synthesis and assembly of PdSe2 NWs film; (b) digital photograph of quartz and SiO2/Si substrates with and without Pd NWs film; (c) SEM image of patterned Pd NWs film atop Si/SiO2 substrate, the right panel shows an enlarged SEM image at the boundary between SiO2 and Si
    Characterization of Pd NWs and PdSe2NWs. (a) SEM image of Pd NWs film and the inset shows the diameter distribution; (b) SEM image of the PdSe2 NWs film and the inset shows the diameter distribution; (c) FETEM image of single PdSe2 NW and elemental mapping images of Pd and Se elements; (d) HRTEM image of PdSe2 NW;(e) magnified HRTEM image of PdSe2 NW; (f) Raman spectrum of the PdSe2 NW
    Schematic of fabrication procedure of the PdSe2 NWs film/Si heterojunction integrated photodetector
    Photoelectric response properties of the device. (a) I-V curve of a typical heterojunction device measured in darkness and digital graph of the integrated device; (b) I-V curves of the device under different light power; (c) current-time (I-T) curves of the device under different light power; (d) photovoltage as a function of light intensity, the inset shows the fitting curve of photocurrent with light intensity; (e) photo-response upon five hundreds of cycles of operation; (f) I-T curve under the frequency of 20 kHz; (g) noise equivalent power diagram
    Analysis of energy band structure and spectral response. (a) Energy band diagram at zero bias; (b) normalized photoresponse as a function of incident light wavelength (200-1300 nm); (c) photoresponse under 1300 nm illumination; (d) absorption spectra of silicon, PdSe2 NWs film, and heterojunction device
    Uniformity analysis of the integrated device. (a) Currents in dark and light irradiation for each device unit;(b) 2D contrast map of dark current; (c) 2D contrast map of photo current; (d) 3D diagram of the current On/Off ratio
    Image sensor application. (a) Working mechanism of the image sensor based on the heterojunction device;(b) 2D current contrast diagram of detector array to letter images
    Tools

    Get Citation

    Copy Citation Text

    Yanan Lin, Yadong Wu, Haiyang Cheng, Yang Lu, Chao Xie, Linbao Luo. Near-Infrared Integrated Photodetector Based on PdSe2Nanowires Film/Si Heterojunction[J]. Acta Optica Sinica, 2021, 41(21): 2125001

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: OPTOELECTRONICS

    Received: Feb. 22, 2021

    Accepted: May. 17, 2021

    Published Online: Oct. 29, 2021

    The Author Email: Lu Yang (yanglu@hfut.edu.cn), Xie Chao (chaoxie@ahu.edu.cn), Luo Linbao (luolb@hfut.edu.cn)

    DOI:10.3788/AOS202141.2125001

    Topics