Near-Infrared Integrated Photodetector Based on PdSe<sub>2</sub>Nanowires Film/Si Heterojunction

Yanan Lin; Yadong Wu; Haiyang Cheng; Yang Lu; Chao Xie; Linbao Luo

doi:10.3788/AOS202141.2125001

Acta Optica Sinica, Volume. 41, Issue 21, 2125001(2021)

Near-Infrared Integrated Photodetector Based on PdSe₂Nanowires Film/Si Heterojunction

Yanan Lin¹, Yadong Wu³, Haiyang Cheng¹, Yang Lu^3、***, Chao Xie^2、**, and Linbao Luo^1、*

Author Affiliations

¹School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230601, China

²School of Electronics & Information Engineering, Anhui University, Hefei, Anhui 230601, China

³School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, Anhui 230601, China

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Yanan Lin, Yadong Wu, Haiyang Cheng, Yang Lu, Chao Xie, Linbao Luo. Near-Infrared Integrated Photodetector Based on PdSe₂Nanowires Film/Si Heterojunction[J]. Acta Optica Sinica, 2021, 41(21): 2125001

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Paper Information

Category: OPTOELECTRONICS

Received: Feb. 22, 2021

Accepted: May. 17, 2021

Published Online: Oct. 29, 2021

The Author Email: Lu Yang (yanglu@hfut.edu.cn), Xie Chao (chaoxie@ahu.edu.cn), Luo Linbao (luolb@hfut.edu.cn)

DOI:10.3788/AOS202141.2125001

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