Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistors and inverters

Laizhe KU; Chao WANG; Liang GUO; Jieyang WANG; Xuefeng CHU; Fan YANG; Yunpeng HAO; Hansong GAO; Yang ZHAO

doi:10.37188/CJLCD.2025-0133

Chinese Journal of Liquid Crystals and Displays, Volume. 40, Issue 9, 1258(2025)

Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistors and inverters

Laizhe KU^1,2, Chao WANG^1,2、*, Liang GUO^1,2, Jieyang WANG^1,2, Xuefeng CHU^1,2, Fan YANG^1,2, Yunpeng HAO^1,2, Hansong GAO^1,2, and Yang ZHAO^1,2

Author Affiliations

¹Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education， Jilin Jianzhu University， Changchun 130118， China

²School of Electrical and Computer Science， Jilin Jianzhu University， Changchun 130118， China

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References(40)

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Laizhe KU, Chao WANG, Liang GUO, Jieyang WANG, Xuefeng CHU, Fan YANG, Yunpeng HAO, Hansong GAO, Yang ZHAO. Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistors and inverters[J]. Chinese Journal of Liquid Crystals and Displays, 2025, 40(9): 1258

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Paper Information

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Received: Jun. 25, 2025

Accepted: --

Published Online: Sep. 25, 2025

The Author Email: Chao WANG (girl.alice@foxmail.com)

DOI:10.37188/CJLCD.2025-0133

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