Chinese Journal of Liquid Crystals and Displays, Volume. 40, Issue 9, 1258(2025)
Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistors and inverters
Fig. 1. （a）Schematic diagram of AZTO-TFT resistor-loaded inverter structure； （b） Circuit diagram of resistor-loaded inverter.
Fig. 2. Cross-sectional and surface morphology images of AZTO active layers with thicknesses of （a） 59 nm， （b） 70 nm， （c） 82 nm， and （d） 91 nm observed by field-emission scanning electron microscopy.
Fig. 3. （a） Transfer characteristic curves of AZTO-TFTs with different active layer thicknesses； （b~e） Output characteristic curves of AZTO-TFTs when the active layer thicknesses are 59 nm， 70 nm， 82 nm， and 91 nm， respectively； （f） Line chart of electrical properties of AZTO-TFTs with different active layer thicknesses.
Fig. 4. O-1s XPS spectra of AZTO-TFTs with the active layer thicknesses of 59 nm （a）， 70 nm （b）， 82 nm （c）， and 91 nm （d）.
Fig. 5. （a） Voltage transfer characteristics and gain curves of AZTO-TFT inverters with different active layer thicknesses at a supply voltage （
Fig. 6. Voltage transfer characteristics curve and gain curve of resistor-loaded inverters fabricated by AZTO thin-film transistors with the active layer thickness of 82 nm under
Table 1. Electrical performance parameters of AZTO-TFT with different active layer thicknesses
View tableView in ArticleTable 1. Electrical performance parameters of AZTO-TFT with different active layer thicknesses
有源层厚度/nm 场效应迁移率/（cm2 · V-1 · s-1） 阈值电压/V 亚阈值摆幅/（V/dec） 电流开关比/（ Ion/ Ioff） 59 3.51 7.45 2.11 3.21×106 70 4.84 14.83 1.62 3.49×107 82 7.47 14.25 1.35 6.16×107 91 5.62 14.40 1.63 5.41×107
Table 2. Components of O-1s XPS spectra of AZTO films with different active layer thicknesses
View tableView in ArticleTable 2. Components of O-1s XPS spectra of AZTO films with different active layer thicknesses
有源层厚度/nm OⅠ/% OⅡ/% OⅢ/% 59 29.91 16.24 54.63 70 13.09 25.78 61.12 82 7.91 28.80 63.29 91 46.61 38.76 14.63
Table 3. Characteristic parameters of the AZTO-TFT resistor-load inverter with the active layer thickness of 82 nm under different
VDD View tableView in ArticleTable 3. Characteristic parameters of the AZTO-TFT resistor-load inverter with the active layer thickness of 82 nm under different
VDD VDD/V VOH/V VOL/V VIL/V VIH/V Vgain NMH/V NML/V TW/V 5 4.6 1.2 5.3 7 1.6 -2.4 4.1 1.7 10 9 1.5 5 7.2 2.7 4 3.5 2.2 15 14 1.6 5.2 7.5 3.9 8.8 3.6 2.3 20 18 1.8 5.2 8.2 7 9.8 3.4 3 25 23 2 5.4 8.7 8.8 14.3 3.4 3.3
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Laizhe KU, Chao WANG, Liang GUO, Jieyang WANG, Xuefeng CHU, Fan YANG, Yunpeng HAO, Hansong GAO, Yang ZHAO. Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistors and inverters[J]. Chinese Journal of Liquid Crystals and Displays, 2025, 40(9): 1258
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Received: Jun. 25, 2025
Accepted: --
Published Online: Sep. 25, 2025
The Author Email: Chao WANG (girl.alice@foxmail.com)
