Photonics Research, Volume. 12, Issue 6, 1186(2024)

High-speed GaN-based laser diode with modulation bandwidth exceeding 5 GHz for 20 Gbps visible light communication

Junfei Wang1, Junhui Hu1,2, Chaowen Guan1, Yuqi Hou1,3, Zengyi Xu1, Leihao Sun1, Yue Wang4, Yuning Zhou1, Boon S. Ooi4, Jianyang Shi1,2,3, Ziwei Li1,3, Junwen Zhang1,2,3, Nan Chi1,2, Shaohua Yu2, and Chao Shen1,2,3、*
Author Affiliations
  • 1School of Information Science and Technology, Fudan University, Shanghai 200433, China
  • 2Peng Cheng Laboratory, Shenzhen 518000, China
  • 3ZGC Institute of Ubiquitous-X Innovation and Applications, Beijing 100876, China
  • 4Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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    References(46)

    [14] J. Wang, C. Ma, D. Li. Ultrafast and high-power green micro-LED for visible light communications. Conference on Lasers and Electro-Optics/Pacific Rim, CTuP11E_02(2022).

    [42] L. A. Coldren, S. W. Corzine, M. L. Mashanovitch. Diode Lasers and Photonic Integrated Circuits(2012).

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    Junfei Wang, Junhui Hu, Chaowen Guan, Yuqi Hou, Zengyi Xu, Leihao Sun, Yue Wang, Yuning Zhou, Boon S. Ooi, Jianyang Shi, Ziwei Li, Junwen Zhang, Nan Chi, Shaohua Yu, Chao Shen, "High-speed GaN-based laser diode with modulation bandwidth exceeding 5 GHz for 20 Gbps visible light communication," Photonics Res. 12, 1186 (2024)

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    Paper Information

    Category: Optoelectronics

    Received: Jan. 3, 2024

    Accepted: Mar. 18, 2024

    Published Online: May. 24, 2024

    The Author Email: Chao Shen (chaoshen@fudan.edu.cn)

    DOI:10.1364/PRJ.516829

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