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Photonics Research, Volume. 12, Issue 6, 1186(2024)

High-speed GaN-based laser diode with modulation bandwidth exceeding 5 GHz for 20 Gbps visible light communication

Junfei Wang1, Junhui Hu1,2, Chaowen Guan1, Yuqi Hou1,3, Zengyi Xu1, Leihao Sun1, Yue Wang4, Yuning Zhou1, Boon S. Ooi4, Jianyang Shi1,2,3, Ziwei Li1,3, Junwen Zhang1,2,3, Nan Chi1,2, Shaohua Yu2, and Chao Shen1,2,3、*
Author Affiliations
  • 1School of Information Science and Technology, Fudan University, Shanghai 200433, China
  • 2Peng Cheng Laboratory, Shenzhen 518000, China
  • 3ZGC Institute of Ubiquitous-X Innovation and Applications, Beijing 100876, China
  • 4Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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    Article index updated: Mar. 7, 2025

    Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.
    The article is cited by 15 article(s) from Web of Science.
    The article is cited by 2 article(s) CLP online library. (Some content might be in Chinese.)
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    Junfei Wang, Junhui Hu, Chaowen Guan, Yuqi Hou, Zengyi Xu, Leihao Sun, Yue Wang, Yuning Zhou, Boon S. Ooi, Jianyang Shi, Ziwei Li, Junwen Zhang, Nan Chi, Shaohua Yu, Chao Shen, "High-speed GaN-based laser diode with modulation bandwidth exceeding 5 GHz for 20 Gbps visible light communication," Photonics Res. 12, 1186 (2024)

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    Paper Information

    Category: Optoelectronics

    Received: Jan. 3, 2024

    Accepted: Mar. 18, 2024

    Published Online: May. 24, 2024

    The Author Email: Chao Shen (chaoshen@fudan.edu.cn)

    DOI:10.1364/PRJ.516829

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology