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Laser & Optoelectronics Progress, Volume. 60, Issue 15, 1525001(2023)

Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer

Aoxiang Zhang1, Bingyang Ren2, Fang Wang1,3,4,5、*, Juin. J. Liou1,3,5, and Yuhuai Liu1,3,4,5、**
Author Affiliations
  • 1National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 2School of Computer and Artificial Intelligence, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 3Institute of Intelligent Sensing, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 4Zhengzhou Way Do Electronics Co., Ltd., Zhengzhou 450001, Henan, China
  • 5Research Institute of Industrial Technology Co., Ltd., Zhengzhou University, Zhengzhou, Henan 450001, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (6)
    Equations (11)
    References (42)
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    Figures & Tables(6)
    Schematic diagram of basic structure of DUV LDs

    Fig. 1. Schematic diagram of basic structure of DUV LDs

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    Schematic diagram of aluminum component change. (a) RSL EBL; (b)TS HBL; (c) SSL EBL; (d) WS HBL

    Fig. 2. Schematic diagram of aluminum component change. (a) RSL EBL; (b)TS HBL; (c) SSL EBL; (d) WS HBL

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    Band diagram and quasi-Fermi level diagram. (a) Structure A; (b) structure B; (c) structure C

    Fig. 3. Band diagram and quasi-Fermi level diagram. (a) Structure A; (b) structure B; (c) structure C

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    Distribution of carrier concentration. (a) Electron concentration in the QWs; (b) hole concentration in the QWs; (c) electron leakage in the p-type region; (d) hole leakage in the n-type region

    Fig. 4. Distribution of carrier concentration. (a) Electron concentration in the QWs; (b) hole concentration in the QWs; (c) electron leakage in the p-type region; (d) hole leakage in the n-type region

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    Experimental results. (a) Radiation recombination rate; (b) P-I curves

    Fig. 5. Experimental results. (a) Radiation recombination rate; (b) P-I curves

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    Experimental results. (a) I-V curves of three structures; (b) electro-optical conversion efficiency of three structures

    Fig. 6. Experimental results. (a) I-V curves of three structures; (b) electro-optical conversion efficiency of three structures

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    Aoxiang Zhang, Bingyang Ren, Fang Wang, Juin. J. Liou, Yuhuai Liu. Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1525001

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    Paper Information

    Category: OPTOELECTRONICS

    Received: May. 21, 2022

    Accepted: Jul. 26, 2022

    Published Online: Aug. 11, 2023

    The Author Email: Fang Wang (iefwang@zzu.edu.cn), Yuhuai Liu (ieyhliu@zzu.edu.cn)

    DOI:10.3788/LOP221886

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology