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Laser & Optoelectronics Progress, Volume. 60, Issue 15, 1525001(2023)

Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer

Aoxiang Zhang1, Bingyang Ren2, Fang Wang1,3,4,5、*, Juin. J. Liou1,3,5, and Yuhuai Liu1,3,4,5、**
Author Affiliations
  • 1National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 2School of Computer and Artificial Intelligence, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 3Institute of Intelligent Sensing, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 4Zhengzhou Way Do Electronics Co., Ltd., Zhengzhou 450001, Henan, China
  • 5Research Institute of Industrial Technology Co., Ltd., Zhengzhou University, Zhengzhou, Henan 450001, China
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    Article index updated: Sep. 7, 2025

    The article is cited by 1 article(s) CLP online library. (Some content might be in Chinese.)
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    Aoxiang Zhang, Bingyang Ren, Fang Wang, Juin. J. Liou, Yuhuai Liu. Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1525001

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    Paper Information

    Category: OPTOELECTRONICS

    Received: May. 21, 2022

    Accepted: Jul. 26, 2022

    Published Online: Aug. 11, 2023

    The Author Email: Fang Wang (iefwang@zzu.edu.cn), Yuhuai Liu (ieyhliu@zzu.edu.cn)

    DOI:10.3788/LOP221886

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology