Journal of Synthetic Crystals, Volume. 54, Issue 3, 524(2025)

Investigation of Boron Implanted Terminations for β-Ga2O3 Schottky Barrier Diodes

SHEN Rui1...2, YU Xinxin1,*, LI Zhonghui1,2, CHEN Duanyang3,4, SAI Qingling3,4, QIAO Bing1, ZHOU Likun1, DONG Xin5, QI Hongji3,4 and CHEN Tangsheng2 |Show fewer author(s)
Author Affiliations
  • 1CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • 2National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing 210016, China
  • 3Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 4Fujia Gallium Technology Co. Ltd., Hangzhou 311421, China
  • 5State Key Laboratoy on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
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    References(15)

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    [3] [3] REN F, YANG J C, FARES C, et al. Device processing and junction formation needs for ultra-high power Ga2O3 electronics[J]. MRS Communications, 2019, 9(1): 77-87.

    [4] [4] HIGASHIWAKI M, SASAKI K, MURAKAMI H, et al. Recent progress in Ga2O3 power devices[J]. Semiconductor Science Technology, 2016, 31(3): 034001.

    [8] [8] SASAKI K, HIGASHIWAKI M, KURAMATA A, et al. Ga2O3 Schottky barrier diodes fabricated by using single-crystal -Ga2O3 (010) substrates[J]. IEEE Electron Device Letters, 2013, 34(4): 493-495.

    [9] [9] DONG P F, ZHANG J C, YAN Q L, et al. 6 kV/3.4 m·cm2 vertical -Ga2O3 Schottky barrier diode with BV2/Ron, sp performance exceeding 1-D unipolar limit of GaN and SiC[J]. IEEE Electron Device Letters, 2022, 43(5): 765-768.

    [11] [11] ROY S, BHATTACHARYYA A, RANGA P, et al. High-k oxide field-plated vertical (001) -Ga2O3 Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm2[J]. IEEE Electron Device Letters, 2021, 42(8): 1140-1143.

    [12] [12] OTSUKA F, MIYAMOTO H, TAKATSUKA A, et al. Large-size (1.7×1.7 mm2) -Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio[J]. Applied Physics Express, 2021, 15: 016501.

    [13] [13] LI W S, NOMOTO K, HU Z Y, et al. Field-plated Ga2O3 trench Schottky barrier diodes with a BV2/Ron,sp of up to 0.95 GW/cm2[J]. IEEE Electron Device Letters, 2020, 41(1): 107-110.

    [14] [14] DHARA S, KALARICKAL N K, DHEENAN A, et al. -Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination[J/OL]. Applied Physics Letters, 2022. DOI: 10.1063/5.6123284.

    [15] [15] ZHOU H, YAN Q L, ZHANG J C, et al. High-performance vertical -Ga2O3 Schottky barrier diode with implanted edge termination[J]. IEEE Electron Device Letters, 2019, 40(11): 1788-1791.

    [16] [16] LIN C H, YUDA Y, WONG M H, et al. Vertical Ga2O3 Schottky barrier diodes with guard ring formed by nitrogen-ion implantation[J]. IEEE Electron Device Letters, 2019, 40(9): 1487-1490.

    [17] [17] GAO Y Y, LI A, FENG Q, et al. High-voltage -Ga2O3 Schottky diode with argon-implanted edge termination[J]. Nanoscale Research Letters, 2019, 14(1): 8.

    [18] [18] LIU H Y, WANG Y G, LV Y J, et al. 10-kV lateral -Ga2O3 MESFETs with B ion implanted planar isolation[J]. IEEE Electron Device Letters, 2023, 44(7): 1048-1051.

    [19] [19] ZHANG J Y, YANG Z N, KUANG S L, et al. Electronic structure and surface band bending of Sn-doped -Ga2O3 thin films studied by X-ray photoemission spectroscopy and ab initiocalculations[J]. Physical Review B, 2024, 110(11): 115120.

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    SHEN Rui, YU Xinxin, LI Zhonghui, CHEN Duanyang, SAI Qingling, QIAO Bing, ZHOU Likun, DONG Xin, QI Hongji, CHEN Tangsheng. Investigation of Boron Implanted Terminations for β-Ga2O3 Schottky Barrier Diodes[J]. Journal of Synthetic Crystals, 2025, 54(3): 524

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    Paper Information

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    Received: Nov. 18, 2024

    Accepted: Apr. 23, 2025

    Published Online: Apr. 23, 2025

    The Author Email: Xinxin YU (yuxx711@126.com)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0287

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