Journal of Synthetic Crystals, Volume. 54, Issue 3, 524(2025)
Investigation of Boron Implanted Terminations for β-Ga2O3 Schottky Barrier Diodes
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SHEN Rui, YU Xinxin, LI Zhonghui, CHEN Duanyang, SAI Qingling, QIAO Bing, ZHOU Likun, DONG Xin, QI Hongji, CHEN Tangsheng. Investigation of Boron Implanted Terminations for β-Ga2O3 Schottky Barrier Diodes[J]. Journal of Synthetic Crystals, 2025, 54(3): 524
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Received: Nov. 18, 2024
Accepted: Apr. 23, 2025
Published Online: Apr. 23, 2025
The Author Email: Xinxin YU (yuxx711@126.com)