Investigation of Boron Implanted Terminations for &#946;-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes

SHEN Rui; YU Xinxin; LI Zhonghui; CHEN Duanyang; SAI Qingling; QIAO Bing; ZHOU Likun; DONG Xin; QI Hongji; CHEN Tangsheng

doi:10.16553/j.cnki.issn1000-985x.2024.0287

Journal of Synthetic Crystals, Volume. 54, Issue 3, 524(2025)

Investigation of Boron Implanted Terminations for β-Ga₂O₃ Schottky Barrier Diodes

SHEN Rui1...2, YU Xinxin1,*, LI Zhonghui1,2, CHEN Duanyang3,4, SAI Qingling3,4, QIAO Bing1, ZHOU Likun1, DONG Xin5, QI Hongji3,4 and CHEN Tangsheng2 |Show fewer author(s)

Author Affiliations

¹CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China

²National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing 210016, China

³Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

⁴Fujia Gallium Technology Co. Ltd., Hangzhou 311421, China

⁵State Key Laboratoy on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

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SHEN Rui, YU Xinxin, LI Zhonghui, CHEN Duanyang, SAI Qingling, QIAO Bing, ZHOU Likun, DONG Xin, QI Hongji, CHEN Tangsheng. Investigation of Boron Implanted Terminations for β-Ga₂O₃ Schottky Barrier Diodes[J]. Journal of Synthetic Crystals, 2025, 54(3): 524

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Paper Information

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Received: Nov. 18, 2024

Accepted: Apr. 23, 2025

Published Online: Apr. 23, 2025

The Author Email: YU Xinxin (yuxx711@126.com)

DOI:10.16553/j.cnki.issn1000-985x.2024.0287

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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