Journal of Synthetic Crystals, Volume. 54, Issue 3, 524(2025)

Investigation of Boron Implanted Terminations for β-Ga2O3 Schottky Barrier Diodes

SHEN Rui1...2, YU Xinxin1,*, LI Zhonghui1,2, CHEN Duanyang3,4, SAI Qingling3,4, QIAO Bing1, ZHOU Likun1, DONG Xin5, QI Hongji3,4 and CHEN Tangsheng2 |Show fewer author(s)
Author Affiliations
  • 1CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • 2National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing 210016, China
  • 3Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 4Fujia Gallium Technology Co. Ltd., Hangzhou 311421, China
  • 5State Key Laboratoy on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
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    β-Ga2O3 is regarded as a promising semiconductor material for the next-generation high-power and high-efficiency power electronic devices for its exceptional physical properties such as wide bandgap and high breakdown electrical field. However, the Ga2O3 Schottky barrier diode (SBD) without terminations are prone to generate the peak electric fields at the edges of the Schottky electrodes, causing premature breakdown of the device, affecting its breakdown characteristics. To address this, a buried high-resistance termination achieved by selectively boron (B) ion implantation at the edge of the Schottky electrode is proposed to modulate the edge electric fields and improve the breakdown voltage. The B ions were implanted with an energy of 60 keV and a dose of 7×1014 cm-2. The implantation depth was evaluated as approximately 200 nm by simulations. With B ion implantation, the on-state characteristics of the Ga2O3 SBD are not changed and the specific on-resistance is still as low as 2.5 mΩ·cm2, whereas the breakdown voltage is significantly improved from 429 V to 1 402 V, which is 226% increased. The corresponding power figure of merit is improved from 74 MW/cm2 to 767 MW/cm2. The electric field simulations reveal that the peak electric field at the edge of the Schottky electrode is substantially suppressed with B implantation, and it decreases with the increase of the implantation depth. This work provides a new approach for the design of terminations for high-performance Ga2O3 power devices.

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    SHEN Rui, YU Xinxin, LI Zhonghui, CHEN Duanyang, SAI Qingling, QIAO Bing, ZHOU Likun, DONG Xin, QI Hongji, CHEN Tangsheng. Investigation of Boron Implanted Terminations for β-Ga2O3 Schottky Barrier Diodes[J]. Journal of Synthetic Crystals, 2025, 54(3): 524

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    Paper Information

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    Received: Nov. 18, 2024

    Accepted: Apr. 23, 2025

    Published Online: Apr. 23, 2025

    The Author Email: Xinxin YU (yuxx711@126.com)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0287

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