[1] Barbier R, Cajgfinger T, Calabria P et al. A single-photon sensitive ebCMOS camera: the LUSIPHER prototype[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 648, 266-274(2011).

[2] Cajgfinger T, Dominjon A, Barbier R. Single photon detection and localization accuracy with an ebCMOS camera[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 787, 176-181(2015).

[3] Yang M J, Qian Y S, Yan Y Y et al. Scintillation noise test system of image intensifier based on CMOS image sensor[J]. Laser & Optoelectronics Progress, 60, 0222001(2023).

[4] Chen J Y, Liu X, Du L L et al. Image noise simulation and verification of area array CMOS sensor[J]. Acta Optica Sinica, 44, 1228007(2024).

[5] Tang N, Wang Z J, Yan S X et al. Experiment and analysis of damage effect of proton irradiation on transmission transistor of CMOS image sensor[J]. Acta Optica Sinica, 44, 0928003(2024).

[6] Song D, Shi F, Li Y. Simulation of charge collection efficiency for EBAPS with uniformly doped substrate[J]. Infrared and Laser Engineering, 45, 0203002(2016).

[7] Bai J Z, Bai Y L, Hou X et al. The analysis of electron scattering among multiplying layer in EBAPS using optimized Monte Carlo method[J]. Modern Physics Letters B, 34, 2050398(2020).

[8] Liu Y N, Sang P, Lü J W et al. Miniature low power consumption EBAPS camera technology[J]. Infrared Technology, 41, 810-818(2019).

[9] Jin W Q, Tao Y, Shi F et al. Progress of low level light video technology[J]. Infrared and Laser Engineering, 44, 3167(2015).

[10] Zhang H Z, Mu Y N, Wang L K et al. Impact of passivation layer on photoelectron energy loss in EBCMOS low-light-level imaging device: a simulation and experimental study[J]. Chinese Journal of Vacuum Science and Technology, 37, 991-996(2017).

[11] Yang J W, Qian Y S, Liu L et al. Development of domestic imaging circuit based on EBAPS[J]. Journal of Applied Optics, 44, 668-676(2023).

[12] Yan Y Y, Qian Y S, Zhang J Z et al. Design of spectral response test system for electron bombardment active pixel sensor[J]. Laser & Optoelectronics Progress, 59, 1304001(2022).

[13] Tian J F, Song D, Chen W J et al. Influence of doping distribution in electron multiplier surface layer on charge collection efficiency of EBCMOS[J]. Semiconductor Optoelectronics, 42, 45-51, 105(2021).

[14] Jiao G C, Song D, Yan L et al. Simulation of charge collection efficiency optimization for EBCMOS with uniform and gradient doping[J]. Chinese Journal of Lasers, 51, 0210001(2024).

[15] Wang X N, Song D, Jiao G C et al. Characterising backscattered electrons in EBCMOS[J]. IEEE Photonics Journal, 14, 6858605(2022).

[16] Zhang C L, Chen Q, Yin L J. Multiplication conditions of EMCCD[J]. Acta Photonica Sinica, 38, 2771-2775(2009).

[17] Tian J S. New development of low light level imaging sensor technology[J]. Infrared Technology, 35, 527-534(2013).

[18] Yang C C, Ju G H, Chen Y P. Study on the photo response of a CMOS sensor integrated with PIN photodiodes[J]. Chinese Optics, 12, 1076-1089(2019).

[19] Wu H, Wu Y, Wu W et al. Study on the digital low-light level night vision device technology[J]. Optoelectronic Technology, 42, 72-78(2022).

[20] Han J, Jiao G C, Yan L et al. Research progress of digital low-light-level devices[J]. Journal of Applied Optics, 44, 874-886(2023).

[21] Qiao K, Wang S K, Cheng H C et al. Experimental study on the electron sensitivity of BCMOS sensor influenced by surface passivation film[J]. Infrared and Laser Engineering, 49, 0418002(2020).

[22] Yan L, Shi F, Cheng H C et al. Research status of dark current in CMOS image sensor[J]. Proceedings of SPIE, 11763, 1176340(2021).

[23] Yan L, Shi F, Cheng H C et al. Dark current of aluminum oxide passivation film BCMOS sensor increased by low energy electron bombardment[J]. Infrared Technology, 46, 342-346(2024).

[24] Zhang Y T, Cao K Q, Sun D X et al. Low light level detection based on scientific CMOS image sensor with high sensitivity and low noise[J]. Laser & Optoelectronics Progress, 55, 080401(2018).

[25] Zhang W W, Chen Q. Noise characteristics of electron multiplying charge coupled devices[J]. Acta Photonica Sinica, 38, 756-760(2009).

[26] Carrère J P, Place S, Oddou J P et al. CMOS image sensor: process impact on dark current[C], 1, 6-5(2014).

[27] Lei R F, Wang Y, Gao J W et al. Study on surface dark current of CCD[J]. Electronic Science and Technology, 27, 26-28, 32(2014).

[28] Werner F, Veith B, Zielke D et al. Electronic and chemical properties of the c-Si/Al2O3 interface[J]. Journal of Applied Physics, 109, 113701(2011).

[29] Song Y Y, Song D, Li Y et al. Influence of passivation layer and P‑type base structure optimization on charge collection efficiency of electron bombardment active pixel sensor[J]. Chinese Journal of Lasers, 50, 1803001(2023).

[30] Liu W J, Sayed I, Gupta C et al. An improved methodology for extracting interface state density at Si3N4/GaN[J]. Applied Physics Letters, 116, 022104(2020).

[31] Wang J M, Chen K J, Song J et al. The fabrication and characterization of silicon-based ultra thin dielectric films[J]. Research & Progress of SSE, 28, 149-153(2008).

[32] Werner F, Cosceev A, Schmidt J. Interface recombination parameters of atomic-layer-deposited Al2O3 on crystalline silicon[J]. Journal of Applied Physics, 111, 073710(2012).

[33] Song D, Zhou J Q, Mu Y N et al. Testing system of multiplying electron gain for electron bombarded semiconductor[J]. Proceedings of SPIE, 10697, 106970T(2018).