Fig. 1. Schematic diagram of noise generation mechanisms in EBCMOS

Fig. 2. Effects of passivation layer materials on noise characteristics of the device. (a) Effects of passivation layer materials on SNR and N_pixel; (b) effect of passivation layers with different densities on SNR; (c) effects of Al₂O₃ density on SNR, N_M, N_pixel, and N_dark; (d) SNR distribution within the 5 pixel×5 pixel area when Al₂O₃ passivation layer density is 3.8 g/cm³

Fig. 3. Effects of passivation layer thickness on noise characteristics of the device. (a) Effect of passivation layer thickness on N_ss; (b) effect of passivation layer thickness on SNR; (c) effects of Al₂O₃ passivation layer thickness on N_ss and N_dark; (d) effects of Al₂O₃ passivation layer thickness on N_M and N_pixel

Fig. 4. Effects of incident electron energy on noise characteristics of the device. (a) Effect of incident electron energy on SNR; (b) effect of incident electron energy on N_M; (c) effect of incident electron energy on N_pixel; (d) effect of incident electron energy on N_pixel and N_dark when using Al₂O₃ as_{passivation layer; (e) effect of incident electron energy on SNRwhen using Al2O3 aspassivation layer; (f) SNR distribution within the 5×5 pixel area for the thickness of Al2O3 passivation layer of 15 nm and the incident electron energy of 6 keV}

Fig. 5. Effect of substrate temperature on noise characteristics of the device. (a) Effect of substrate temperature on SNR; (b) effects of substrate temperature on N_pixel and N_M when using Al₂O₃ as passivation layer; (c) effects of substrate temperature on N_dark, N_sur, N_dif, and N_gr when using Al₂O₃ as passivation layer; (d) SNR distribution within the 5 pixel×5 pixel area for the thickness of Al₂O₃ passivation layer of 15 nm, the incident electron energy of 6 keV, and substrate temperature of 260 K