[1] Jones E A, Wang F F, Costinett D[J]. IEEE J. Emerg. Sel. Top. Power Electron., 4, 707(2016).

[2] Wang L, Hu W D, Chen X S, Lu W[J]. Acta Phys. Sin., 59, 5730(2010).

[3] Zhang A, Zhang L, Tang Z, Cheng X, Wang Y, Chen K J, Chan M[J]. IEEE Trans. Electron Devices, 61, 755(2014).

[4] Pregaldiny F, Lallement C, Mathiot D[J]. Solid-State Electron., 46, 2191(2002).

[5] Bansal A, Paul B C, Roy K[J]. IEEE Trans. Electron Devices, 52, 256(2005).

[6] Li K, Rakheja S[J]. Device Research Conference-Conference Digest, DRC the University of California, 1(2018).

[7] Jia Y, Xu Y, Wen Z, Wu Y, Guo Y[J]. IEEE Trans. Electron Devices, 66, 357(2019).

[8] Vetury R, Zhang N Q, Keller S, Mishra U K[J]. IEEE Trans. Electron Devices, 48, 560(2001).

[9] Guo Y L, Chen Y F, Li S Y, Lei L, Bai C Q[J]. Chin. J. Lumin., 38, 1000(2017).

[10] Cheng X, Wang Y[J]. IEEE Trans. Electron Devices, 58, 448(2011).

[11] Dasgupta N, DasGupta A[J]. Solid-State Electron., 36, 201(1993).

[12] Huque M A, Eliza S A, Ragman T, Huq H F, Islam S K[J]. Solid-State Electron., 53, 341(2009).

[13] Ahsan S A, Ghosh S, Sharma K, Dasgupta A, Khandelwal S, Chauhan Y S[J]. IEEE Trans. Electron Devices, 63, 565(2016).

[14] Rashmi , Kranti A, Haldar S, Gupta R S[J]. Solid-State Electron., 46, 621(2002).

[15] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J[J]. J. Appl. Phys, 85, 3222(1999).

[16] Fan L, Hao Y[J]. Acta Phys. Sin., 56, 3393(2007).

[17] Ambacher O, Majewski J, Miskys C, Link A, Hermann M, Eickhoff M, Stutzmann M, Bernardini F, Fiorentini V, Tilak V, Schaff B, Eastman L F[J]. J. Phys.-Condes. Matter, 14, 3399(2002).

[18] Khandelwal S, Chauhan Y S, Fjeldly T A[J]. IEEE Trans. Electron Devices, 59, 2856(2012).

[19] He X G, Zhao D G, Jiang D S[J]. Chin. Phys. B, 24, 067301(2015).

[20] Li M, Wang Y[J]. IEEE Trans. Electron Devices, 55, 261(2008).

[21] Alim M A, Rezazadeh A A, Gaquiere C[J]. Semicond. Sci. Technol., 31, 125016(2016).