Fig. 1. Diagrams of Si-based double layer metal grating infrared light modulator based on graphene. (a) Three-dimensional diagram; (b) cross-section diagram

Fig. 2. Transmission spectra of modulators without and with Al film on top. Transmission spectra of modulator without Al film on top for (a) TM incident light and (b) TE incident light under different Fermi levels; transmission spectra of modulator with Al film on top for (c) TM incident light and (d) TE incident light under different Fermi levels; (e) FWHM of resonant peak versus Fermi level with or without Al film

Fig. 3. Distributions of electric field of structures with and without Al film on top. (a) Electric field of structure without Al film on top when Fermi level E_f=0.3 eV and resonant wavelength λ=18.5 μm; (b) electric field of structure without Al film on top when Fermi level E_f=0.3 eV and λ=7 μm (away from the resonance peak); (c) electric field of structure with Al film on top when Fermi level E_f=0.3 eV and resonant wavelength λ

Fig. 4. Influences of structural parameters on properties of proposed structure. (a) Transmissivity of TM light varying with H₁ when W=110 nm, H₂=50 nm, and P=150 nm; (b) transmissivity of TM light varying with W when H₁=700nm, H₂=50 nm, and P=150 nm; (c) transmissivity of TM light varying with H₂ when H₁=700nm, W=110 nm, and P=150 nm; (d) transmissivity o

Fig. 5. Influence of H1on property of device. (a) H₁=500 nm; (b) H₁=600 nm; (c) H₁=700 nm