Journal of Semiconductors, Volume. 40, Issue 1, 011805(2019)
Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3
Fig. 1. (Color online) Schematic diagram of (a) horizontal HVPE and (b) vertical HVPE.
Fig. 2. (Color online) Optical photograph (unpublished) and SEM images of HVPE grown
Fig. 3. (Color online) The cross-section HRTEM of
Fig. 4. (Color online) Schematic Ga2O3 SBD structure with an HVPE-grown n-Ga2O3 drift layer.
Fig. 5. (Color online) Schematic structure, forward and reverse
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Xiangqian Xiu, Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang, Youdou Zheng. Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3[J]. Journal of Semiconductors, 2019, 40(1): 011805
Category: Reviews
Received: Sep. 27, 2018
Accepted: --
Published Online: Sep. 18, 2021
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