Journal of Semiconductors, Volume. 40, Issue 1, 011805(2019)

Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3

Xiangqian Xiu, Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang, and Youdou Zheng
Author Affiliations
  • Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
  • show less
    Figures & Tables(5)
    (Color online) Schematic diagram of (a) horizontal HVPE and (b) vertical HVPE.
    (Color online) Optical photograph (unpublished) and SEM images of HVPE grown β-Ga2O3 at 850 °C.
    (Color online) The cross-section HRTEM of α- and ε-Ga2O3 on c-plane sapphire[40].
    (Color online) Schematic Ga2O3 SBD structure with an HVPE-grown n-Ga2O3 drift layer.
    (Color online) Schematic structure, forward and reverse J–V characteristics of Ni/Au Ga2O3 SBD.
    Tools

    Get Citation

    Copy Citation Text

    Xiangqian Xiu, Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang, Youdou Zheng. Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3[J]. Journal of Semiconductors, 2019, 40(1): 011805

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Reviews

    Received: Sep. 27, 2018

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/1/011805

    Topics