Journal of Infrared and Millimeter Waves, Volume. 42, Issue 4, 450(2023)

Effect of Be doping in active regions on the performance of 1.3 μm InAs quantum dot lasers

An-Tian DU1,2, Chun-Fang CAO2, Shi-Xian HAN2,3, Hai-Long WANG1、*, and Qian GONG2,3、**
Author Affiliations
  • 1School of Physics and Physical Engineering,Shandong Provincial Key Laboratory of Laser Polarization and Information Technology,Qufu Normal University,Qufu273165,China
  • 2Key Laboratory of Terahertz Solid State Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • 3Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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    Figures & Tables(8)
    The schematic diagram of GaAs based InAs quantum dot laser structure
    Cross section SEM of InAs quantum dot laser on GaAs
    The PL spectra of GaAs-based undoped and Be-doped InAs quantum dot lasers,Inset:a 2×2 µm2 AFM image of InAs quantum dots
    The IVP characteristic curves of GaAs-based InAs quantum dot laser in CW mode:(a)undoped,(b)Be-doped
    The IP characteristic curves of GaAs-based InAs quantum dot laser with different ridge widths in CW mode:(a)10 μm,(b)50 μm
    The emission spectra of GaAs-based InAs QD laser with different injection currents at the temperature of 20 ℃:(a)undoped,(b)Be-doped
    The emission spectra of GaAs-based InAs QD laser with different temperatures at the same injection current of 350 mA:(a)undoped,(b)Be-doped
    The characteristic temperature curves of GaAs-based InAs quantum dot laser
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    An-Tian DU, Chun-Fang CAO, Shi-Xian HAN, Hai-Long WANG, Qian GONG. Effect of Be doping in active regions on the performance of 1.3 μm InAs quantum dot lasers[J]. Journal of Infrared and Millimeter Waves, 2023, 42(4): 450

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    Paper Information

    Category: Research Articles

    Received: Dec. 22, 2022

    Accepted: --

    Published Online: Aug. 1, 2023

    The Author Email: Hai-Long WANG (hlwang@qfnu.edu.cn), Qian GONG (qgong@mail.sim.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2023.04.004

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