Journal of Infrared and Millimeter Waves, Volume. 42, Issue 4, 450(2023)
Effect of Be doping in active regions on the performance of 1.3 μm InAs quantum dot lasers
Fig. 1. The schematic diagram of GaAs based InAs quantum dot laser structure
Fig. 3. The PL spectra of GaAs-based undoped and Be-doped InAs quantum dot lasers,Inset:a 2×2 µm2 AFM image of InAs quantum dots
Fig. 4. The IVP characteristic curves of GaAs-based InAs quantum dot laser in CW mode:(a)undoped,(b)Be-doped
Fig. 5. The IP characteristic curves of GaAs-based InAs quantum dot laser with different ridge widths in CW mode:(a)10 μm,(b)50 μm
Fig. 6. The emission spectra of GaAs-based InAs QD laser with different injection currents at the temperature of 20 ℃:(a)undoped,(b)Be-doped
Fig. 7. The emission spectra of GaAs-based InAs QD laser with different temperatures at the same injection current of 350 mA:(a)undoped,(b)Be-doped
Fig. 8. The characteristic temperature curves of GaAs-based InAs quantum dot laser
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An-Tian DU, Chun-Fang CAO, Shi-Xian HAN, Hai-Long WANG, Qian GONG. Effect of Be doping in active regions on the performance of 1.3 μm InAs quantum dot lasers[J]. Journal of Infrared and Millimeter Waves, 2023, 42(4): 450
Category: Research Articles
Received: Dec. 22, 2022
Accepted: --
Published Online: Aug. 1, 2023
The Author Email: Hai-Long WANG (hlwang@qfnu.edu.cn), Qian GONG (qgong@mail.sim.ac.cn)