Chinese Optics, Volume. 15, Issue 1, 1(2022)

Research progress of lithium niobate thin-film modulators

Hai-feng LIU1, Hong-jie GUO1,2, Man-qing TAN1,2、*, and Zhi-yong LI1
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-electronics Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(20)
    (a)~(c) LNOI structure: (a) diffused waveguide; (b) loaded waveguide; (c) ridge waveguide. (d) SOI structure
    Schematic diagrams of (a) MZI structure and (b) MI structure
    Light intensity distribution diagram of the output port of the resonant cavity structure waveguide[16]. (a) Microring structure; (b) photonic crystal structure. The blue line is the optical characteristic change curve of the waveguide after an electric field is applied
    (a) Tapered coupling model[19]; (b) inverse tapered coupling model[19]; (c) grating coupling model[19]; (d) evanescent coupling model[19]
    Optical fiber and modulator integration scheme[29]. (a) Modulator structure; (b) waveguide structure when light propagates in an optical fiber; (c) waveguide structure when light propagates in a waveguide
    Electrode basic structure of LN modulators. (a) The electric field direction is parallel to the waveguide core; (b) the electric field direction is perpendicular to the waveguide core
    (a) Lumped electrode structure; (b) traveling wave electrode structure
    (a)~(d) CMP process flow chart and (e) CMP system structure diagram[58]
    Waveguide image (a) before and (b) after FIBm[59]
    Diamond cutting process for manufacturing waveguides[61]
    The light field change diagram of the output port of the modulator. (a) PM; (b) MZM; (c) MIM; (d) MRM; (e) PHCM
    • Table 1. Summary of different coupling schemes

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      Table 1. Summary of different coupling schemes

      耦合方案TE损耗/ (dB·facet−1) LN切向特点
      边缘耦合:锥形[20]1.5X工艺难度大,损耗低
      边缘耦合:反锥形[25]0.5X工艺难度大,损耗低
      光栅耦合[26]3.5Z工艺成熟,但损耗高
      消逝耦合[28]1.32X工艺难度较大,损耗低
      光纤集成[29]<1.5X工艺难度较大,损耗较低
    • Table 2. Comparison of different etching processes

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      Table 2. Comparison of different etching processes

      刻蚀工艺侧壁倾斜度损耗/(dB·cm−1) 脊形宽度/μm特点
      湿法刻蚀[54]NAN$0.3\left({\rm{TE}}\right)$$0.9\left({\rm{TM}}\right)$6.5波导尺寸大
      干法刻蚀[57]NAN$0.2\left({\rm{TE}}\right)$0.8损耗小,波导尺寸小
      化学机械抛光(CMP)[53, 58]9~51°$0.027\left({\rm{TE}}\right)$3损耗小,波导尺寸大
      金刚石切割[61]>65°$1.2\left({\rm{TE}}\right)$$2.8\left({\rm{TM}}\right)$2.1损耗较大, 波导容易断裂
    • Table 3. Comparison of loss of different loaded materials

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      Table 3. Comparison of loss of different loaded materials

      加载材料损耗(TE)/(dB·cm−1)
      ${\rm{Si}}_{3}{{\rm{N}}}_{4}$[62]$2.25$
      ${\rm{Ti}}{{\rm{O}}}_{2}$[69]$5.8$
      $ {\mathrm{T}\mathrm{a}}_{2}{\mathrm{O}}_{5} $[67]$5$
      硫化物玻璃材料[68]$1.2$
    • Table 4. \begin{document}${V}_{{\text{π}} }{L}$\end{document} summary

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      Table 4. \begin{document}${V}_{{\text{π}} }{L}$\end{document} summary

      论文编号调制器薄膜 结构分类 调制器光学 结构分类 ${ V }_{ {\text{π} } }{L}/({\rm{V} }\cdot{\rm{ cm} }$) 年份
      [70] Rib Etch on LNOIMZM1.752021
      [25] Rib Etch on LNOIMZM2.362021
      [62] Rib load on LNOIMZM2.1122020
      [71] Rib load on LNOIMZM3.122020
      [72] Rib Etch on LNOIMZM2.47/2.3252020
      [73] Rib Etch on LNOIMZM2.22020
      [74] Rib Etch on LNOIMZM1.62019
      [75] TFLN on SOIMZM2.552019
      [13] TFLN on SOIMZM2.2252019
      [76] TFLN on SOIMIM1.22019
      [64] Rib load on LNOIMZM3.62019
      [64] Rib Etch on LNOIMZM4.92019
      [47] PE&APE on LNOIMZM10.22019
      [77] Rib Etch on LNOIMIM1.42019
      [12] TFLN on SOIMZM6.72018
      [49] Rib Etch on LNOIMZM1.82018
      [57] Rib Etch on LNOIMZM2.8/2.3/2.22018
      [78] PE&APE on LNOIPM6.52016
    • Table 5. Tunability summary

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      Table 5. Tunability summary

      论文编号调制器薄膜 结构分类 调制器光学 结构分类 可调谐性/(pm·V−1) 年份
      [79] Rib Etch on LNOIPHCM162020
      [80] Rib Etch on LNOIMRM92020
      [65] Rib load on LNOIMRM2.92019
      [81] Rib Etch on LNOIMRM32019
      [49] Rib Etch on LNOIMRM2018
    • Table 6. Summary of optical loss

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      Table 6. Summary of optical loss

      论文编号调制器薄膜 结构分类 调制器光学 结构分类 光学损耗/dB年份
      [25] Rib Etch on LNOIMZM32021
      [62] Rib load on LNOIMZM12.42020
      [71] Rib load on LNOIMZM13.862020
      [79] Rib Etch on LNOIPHCM2.22020
      [72] Rib Etch on LNOIMZM9.7/10.42020
      [75] TFLN ON SOIMZM2.52019
      [13] TFLN ON SOIMZM<12019
      [76] TFLN ON SOIMIM3.32019
      [77] Rib Etch on LNOIMIM7.82019
      [82] Rib load on LNOIPM>8.42016
    • Table 7. Summary of OER

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      Table 7. Summary of OER

      论文编号调制器薄膜 结构分类 调制器光学 结构分类 消光比(dB)年份
      [62] Rib load on LNOIMZM302020
      [79] Rib Etch on LNOIPHCM11.52020
      [80] Rib Etch on LNOIMRM202020
      [76] TFLN ON SOIMIM6.62019
      [49] Rib Etch on LNOIMZM102018
      [57] Rib Etch on LNOIMZM302018
    • Table 8. Summary of 3 dB bandwidth

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      Table 8. Summary of 3 dB bandwidth

      论文编号调制器薄膜 结构分类 调制器光学 结构分类 3 dB带宽/GHz年份
      [70] Rib Etch on LNOIMZM402021
      [25] Rib Etch on LNOIMZM602021
      [71] Rib load on LNOIMZM292020
      [79] Rib Etch on LNOIPHCM17.52020
      [72] Rib Etch on LNOIMZM48/672020
      [80] Rib Etch on LNOIMRM282020
      [73] Rib Etch on LNOIMZM672020
      [75] TFLN ON SOIMZM>702019
      [13] TFLN ON SOIMZM1002019
      [76] TFLN ON SOIMIM17.52019
      [64] Rib load on LNOIMZM5~4202019
      [64] Rib Etch on LNOIMZM3~3402019
      [83] Rib Etch on LNOIPM302019
      [77] Rib Etch on LNOIMIM122019
      [12] TFLN ON SOIMZM1002018
      [49] Rib Etch on LNOIMRM302018
      [57] Rib Etch on LNOIMZM15~802018
    • Table 9. Summary of modulation rate

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      Table 9. Summary of modulation rate

      论文编号调制器薄膜 结构分类 调制器光学 结构分类 调制速率/( ${\rm{Gbit}}{{\rm{s}}}^{-1}$) 年份
      [71] Rib load on LNOIMZM29@NRZ2020
      [72] Rib Etch on LNOIMZM220@QPSK 320@QAM 2020
      [79] Rib Etch on LNOIPHCM11@NRZ2020
      [75] TFLN ON SOIMZM100@OOK 112@PAM-4 2019
      [76] TFLN ON SOIMIM40@OOK2019
      [77] Rib Etch on LNOIMIM35@NRZ2019
      [49] Rib Etch on LNOIMRM40@NRZ2018
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    Hai-feng LIU, Hong-jie GUO, Man-qing TAN, Zhi-yong LI. Research progress of lithium niobate thin-film modulators[J]. Chinese Optics, 2022, 15(1): 1

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    Paper Information

    Category: Review

    Received: May. 24, 2021

    Accepted: --

    Published Online: Jul. 27, 2022

    The Author Email:

    DOI:10.37188/CO.2021-0115

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