Researching | A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica, Volume. 69, Issue 5, 057101-1(2020)

A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor

Meng Zhang, Ruo-He Yao^*, and Yu-Rong Liu

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School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China

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Meng Zhang, Ruo-He Yao, Yu-Rong Liu. A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(5): 057101-1

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Received: Oct. 7, 2019

Accepted: --

Published Online: Nov. 18, 2020

The Author Email:

DOI:10.7498/aps.69.20191512

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