<trans-title xml:lang="en">A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor</trans-title>

Fig. 3. The channel thermal noise at different gate-source bias: (a) Comparison with the model only considering the channel length modulation effect; (b) comparison with the model using the existing temperature model.

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Fig. 4. The channel thermal noise at different gate-source bias (L_eff = 0.13 μm).

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Table 1.
Parameters of NMOS.
NMOS的器件参数
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Table 1.
Parameters of NMOS.
NMOS的器件参数
参数数值
v_sat/m·s^–1 1.0 ×10⁵
σ 0.02
t_ox/nm 1
θ/V^–1 1.058
ε_Si/F·cm^–1 11.7 × (8.85 × 10^–14)
ε_ox/F·cm^–1 3.9 × (8.85 × 10^–14)
λ 5.23

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Meng Zhang, Ruo-He Yao, Yu-Rong Liu. A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(5): 057101-1

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Paper Information

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Received: Oct. 7, 2019

Accepted: --

Published Online: Nov. 18, 2020

The Author Email:

DOI:10.7498/aps.69.20191512

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Table 1. Parameters of NMOS.NMOS的器件参数

Table 1. Parameters of NMOS.NMOS的器件参数

Table 1.
Parameters of NMOS.
NMOS的器件参数

Table 1.
Parameters of NMOS.
NMOS的器件参数