Failure Analysis and Early Screening of High Power Substrate-Transferred VCSEL Arrays

Quancai Zhou; Yang Li; Chongxian Yuan; Xinye Fan; Chuanchuan Li; Xin Wei

doi:10.3788/CJL231556

Chinese Journal of Lasers, Volume. 51, Issue 13, 1301006(2024)

Failure Analysis and Early Screening of High Power Substrate-Transferred VCSEL Arrays

Quancai Zhou^1,2, Yang Li^2,3, Chongxian Yuan^2,4, Xinye Fan¹, Chuanchuan Li^2,3、*, and Xin Wei^2,3

Author Affiliations

¹School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, Shandong , China

²Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

³College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

⁴School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(15)

Fig. 1. (a) No irregular protruding device 2D plane diagram; (b) irregularly protruded device 2D plane diagram; (c) device morphology diagram with a high void ratio; (d) device morphology diagram with a low void ratio; (e) light and dark spot diagram of a device with a high density of dark spots; (f) light and dark spot diagram of a device without dark spots

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Fig. 2. Integrated aging equipment diagram

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Fig. 3. (a) Thermal distribution map of devices with significant protrusion heights; (b) thermal distribution map of devices with large protrusion areas

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Fig. 4. (a) 2D plane diagram; (b) brightness and dark spot map before aging; (c) brightness and dark spot map after aging; (d) distribution map of solder voids before aging; (e) distribution map of solder layer voids after aging

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Fig. 5. (a) 2D plane diagram; (b) brightness and dark spot map before aging; (c) brightness and dark spot map after aging; (d) distribution map of solder layer voids after aging; (e) Cross-sectional SEM image of a single-laser diode with a bump location

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Fig. 6. (a) 2D plane diagram; (b) brightness and dark spot map after aging; (c) distribution map of solder layer voids after aging

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Fig. 7. (a) Distribution map of welding voids in device B10 before aging; (b) distribution map of welding voids in device B11 before aging; (c) B10 device post-aging bright and dark point images; (d) B11 device post-aging bright and dark point images

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Fig. 8. (a) Brightness and dark spot map before aging; (b) brightness and dark spot map after aging; (c) cross-sectional SEM image of a single-laser diode with dark spot location

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Fig. 9. Principle diagram for laser lifetime extrapolation under ACC mode

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Fig. 10. Extrapolation chart of the lifetimes of three groups of lasers under ACC mode

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Table 1. Experimental grouping arrangement

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Table 1. Experimental grouping arrangement

No.	Types of experimental devices	Experimental condition	Quantity
A	Surface bump height > 6 μm	Current 50 A, pulse width 30 ms, frequency 10 Hz	12
B	No irregular protruding and void ratio over 1.7%	Current 50 A, pulse width 30 ms, frequency 10 Hz	12
C	No irregular protruding and has more than 10 dark spots	Current 50 A, pulse width 30 ms, frequency 10 Hz	12

Table 2. Power degradation of group A devices after 26.28 million aging pulses

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Table 2. Power degradation of group A devices after 26.28 million aging pulses

Sample No.	Number of dark spots before aging	Void ratio /%	Irregular bump area percentage /%	Irregular surface bump height/μm	Power decay ratio /%
A1	3	0.13	7.18	9.9	7.17
A2	5	0.95	21.21	6.8	Early failure
A3	~300	1.40	11.11	21.6	Early failure
A4	0	0.63	16.23	9.3	Early failure
A5	3	1.54	9.21	14	5.16
A6	22	2.55	7.32	22.1	Early failure
A7	~60	1.38	9.68	16.5	5.34
A8	0	0.58	12.53	16.9	6.57
A9	7	2.58	12.32	8.1	5.11
A10	10	3.14	6.52	6.2	6.57
A11	11	0.56	9.40	14.4	6.11
A12	31	1.35	13.19	9.2	6.80

Table 3. Power degradation of group B devices after 26.28 million aging pulses

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Table 3. Power degradation of group B devices after 26.28 million aging pulses

Sample No.	Number of darkspots before	Void ratio /%	Power decayratio /%
B1	3	3.41	7.46
B2	4	2.28	6.50
B3	5	2.19	7.14
B4	2	2.36	7.14
B5	8	2.31	6.67
B6	7	1.97	8.21
B7	9	2.22	9.35
B8	5	2.37	7.53
B9	3	1.85	7.43
B10	9	2.60	Early failure
B11	10	3.28	Early failure
B12	1	1.78	6.71

Table 4. Power degradation of group C devices after 26.28 million aging pulses

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Table 4. Power degradation of group C devices after 26.28 million aging pulses

Sample No.	Number of darkspots before	Void ratio /%	Power decay ratio /%
C1	~240	0.72	Early failure
C2	19	1.54	4.50
C3	21	1.06	4.30
C4	20	1.13	5.00
C5	15	1.51	7.04
C6	13	1.66	7.14
C7	18	0.93	4.65
C8	19	0.23	3.54
C9	~120	0.18	Early failure
C10	12	0.15	5.30
C11	35	0.11	5.15
C12	15	1.13	4.65

Table 5. Permitted extend of extrapolation to achieved lifetime data
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Table 5. Permitted extend of extrapolation to achieved lifetime data
Number oftest lasers Standard deviation ofthe degradation rate
Permitted extrapolation
extend n
5‒10 5% to 10% 3
5‒10 <5% 5
>10 5% to 10% 5
>10 <5% 7

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Quancai Zhou, Yang Li, Chongxian Yuan, Xinye Fan, Chuanchuan Li, Xin Wei. Failure Analysis and Early Screening of High Power Substrate-Transferred VCSEL Arrays[J]. Chinese Journal of Lasers, 2024, 51(13): 1301006

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