Chinese Optics Letters, Volume. 9, Issue 1, 010402(2011)

Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes

Peng Zhou1, Changjun Liao2, Zhengjun Wei2, Chunfei Li1, and Shuqiong Yuan2
Author Affiliations
  • 1Department of Physics, Harbin Institute of Technology, Harbin 150001, China
  • 2Lab of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China
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    CLP Journals

    [1] Peng Zhao, Yabo Yuan, Yan Zhang, Weiping Qian, "Detection performance of trigger-controlled Geiger-mode avalanche photodiodes in weak optical signal detection," Chin. Opt. Lett. 14, 042801 (2016)

    [2] Yu Li, Weifang Yuan, Ke Li, Xiaofeng Duan, Kai Liu, Yongqing Huang, "InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range," Chin. Opt. Lett. 20, 022503 (2022)

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    Peng Zhou, Changjun Liao, Zhengjun Wei, Chunfei Li, Shuqiong Yuan, "Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes," Chin. Opt. Lett. 9, 010402 (2011)

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    Paper Information

    Received: Jun. 5, 2010

    Accepted: Aug. 20, 2010

    Published Online: Jan. 7, 2011

    The Author Email:

    DOI:10.3788/COL201109.010402

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