Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes

Peng Zhou; Changjun Liao; Zhengjun Wei; Chunfei Li; Shuqiong Yuan

doi:10.3788/COL201109.010402

Chinese Optics Letters, Volume. 9, Issue 1, 010402(2011)

Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes

Peng Zhou¹, Changjun Liao², Zhengjun Wei², Chunfei Li¹, and Shuqiong Yuan²

Author Affiliations

¹Department of Physics, Harbin Institute of Technology, Harbin 150001, China

²Lab of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China

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Peng Zhou, Changjun Liao, Zhengjun Wei, Chunfei Li, Shuqiong Yuan, "Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes," Chin. Opt. Lett. 9, 010402 (2011)

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Paper Information

Received: Jun. 5, 2010

Accepted: Aug. 20, 2010

Published Online: Jan. 7, 2011

The Author Email:

DOI:10.3788/COL201109.010402

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology