Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Optics Letters, Volume. 9, Issue 1, 010402(2011)

Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes

Peng Zhou1, Changjun Liao2, Zhengjun Wei2, Chunfei Li1, and Shuqiong Yuan2
Author Affiliations
  • 1Department of Physics, Harbin Institute of Technology, Harbin 150001, China
  • 2Lab of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China
    • show less
    AbstractGet PDF
    References (15)
    Cited By (5)
    Tools
    Paper Information
    Topics

    We examine the saturation of relative current gain of In0.53Ga0.47As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.

    Keywords
    040.1345040.3060040.5160040.5570
    Tools

    Get Citation

    Copy Citation Text

    Peng Zhou, Changjun Liao, Zhengjun Wei, Chunfei Li, Shuqiong Yuan, "Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes," Chin. Opt. Lett. 9, 010402 (2011)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Received: Jun. 5, 2010

    Accepted: Aug. 20, 2010

    Published Online: Jan. 7, 2011

    The Author Email:

    DOI:10.3788/COL201109.010402

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology