[1] [1] CHEN K J, HBERLEN O, LIDOW A, et al. GaN-on-Si power technology: devices and applications[J]. IEEE Transactions on Electron Devices, 2017, 64(3): 779-795. doi: 10.1109/TED.2017.2657579.

[2] [2] LI K, EVANS P L, JOHNSON C M. Characterisation and modeling of gallium nitride power semiconductor devices dynamic on-state resistance[J]. IEEE Transactions on Power Electronics, 2017, 33(6): 5262-5273. doi: 10.1109/TPEL.2017.2730260.

[3] [3] GUPTA S D, JOSHI V, CHAUDHURI R R, et al. On the root cause of dynamic on resistance behavior in AlGaN/GaN HEMTs[C]//2020 IEEE International Reliability Physics Symposium (IRPS). Dallas, TX, USA: IEEE, 2020: 1-4. doi: 10.1109/IRPS45951.2020.9128226.

[4] [4] ROY C, PARKHIDEH B. Design consideration for characterization and study of dynamic on state resistance of GaN devices[C]//2019 IEEE the 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). Raleigh, NC, USA: IEEE, 2019: 181-186. doi: 10.1109/WiPDA46397.2019.8998909.

[6] [6] YANG F, XU C, UGUR E, et al. Design of a fast dynamic on-resistance measurement circuit for GaN power HEMTs[C]//2018 IEEE Transportation Electrification Conference and Expo (ITEC). Long Beach, CA, USA: IEEE, 2018: 359-365. doi: 10.1109/ITEC.2018.8450093.

[7] [7] LI Rui, WU Xinke, YANG Shu, et al. Dynamic on-state resistance test and evaluation of GaN power devices under hard-and Soft-Switching conditions by double and multiple pulses[J]. IEEE Transactions on Power Electronics, 2019, 34(2): 1044-1053. doi: 10.1109/TPEL.2018.2844302.

[8] [8] FOULKES T, MODEER T, PILAWA-PODGURSKI R C N. Developing a standardized method for measuring and quantifying dynamic on-state resistance via a survey of low voltage GaN HEMTs[C]//2018 IEEE Applied Power Electronics Conference and Exposition (APEC). San Antonio, TX, USA: IEEE, 2018: 2717-2724. doi: 10.1109/APEC.2018.8341401.

[9] [9] GUACCI M, BORTIS D, KOLAR J W. On-state voltage measurement of fast switching power semiconductors[J]. CPSS Transactions on Power Electronics and Applications, 2018, 3(2): 163-176. doi: 10.24295/CPSSTPEA.2018.00016.

[10] [10] ZULAUF G, GUACCI M, RIVAS-DAVILA J M, et al. The impact of multi-MHz switching frequencies on dynamic on-resistance in GaN-on-Si HEMTs[J]. IEEE Open Journal of Power Electronics, 2020, 1: 210-215. doi: 10.1109/OJPEL.2020.3005879.

[11] [11] YANG Shu, ZHOU Chunhua, HAN Shaowen, et al. Buffer trapping-induced RON degradation in GaN-on-Si power transistors: role of electron injection from Si substrate[C]//2017 the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD). Sapporo, Japan: IEEE, 2017: 101-104. doi: 10.23919/ISPSD.2017.7988903.