High-voltage SOI LDMOS devices are widely used in many applications, including consumer electronics and industrial control systems, due to their high level of integration and low power consumption. This paper presents the design and optimization of thick-gate-oxygen SOI PLDMOS devices and thin-gate-oxygen SOI NLDMOS devices, which are the key components of the high-voltage integrated driver circuits. Simulations are performed using TCAD simulation software Medici to optimize the drift region and trap region doping dose and the drift region length, so as to increase the breakdown voltage of the devices, reduce the specific on-resistance, and obtain the appropriate threshold voltage and open-state breakdown voltage values. The optimized thick-gate oxygen SOI PLDMOS device has a breakdown voltage of -235.7 V, a specific on-resistance of 19.6 mΩ·cm², a threshold voltage of -36.7 V, and an open-state breakdown voltage of -250 V. The thin-gate oxygen SOI NLDMOS device has a breakdown voltage of 276.7 V, a specific on-resistance of 11.5 mΩ·cm², a threshold voltage of 1.9 V, and an open-state breakdown voltage of 119 V.