Multi-step <italic toggle="yes">in situ</i> interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes

Li Chen; Jie Sun; Wei Guo; Jason Hoo; Wei Lin; Hangyang Chen; Houqiang Xu; Long Yan; Shiping Guo; Junyong Kang; Jichun Ye

doi:10.1364/PRJ.459897

Photonics Research, Volume. 10, Issue 12, 2778(2022)

Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes

Li Chen^1,2、†,*, Jie Sun^1、†, Wei Guo^1,2, Jason Hoo³, Wei Lin⁴, Hangyang Chen⁴, Houqiang Xu^1,5, Long Yan³, Shiping Guo³, Junyong Kang⁴, and Jichun Ye^1,2,6

Author Affiliations

¹Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

²Yongjiang Laboratory, Ningbo 315201, China

³Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China

⁴Department of Physics, Xiamen University, Xiamen 361005, China

⁵University of Chinese Academy of Sciences, Beijing 100049, China

⁶e-mail:

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References(20)

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Li Chen, Jie Sun, Wei Guo, Jason Hoo, Wei Lin, Hangyang Chen, Houqiang Xu, Long Yan, Shiping Guo, Junyong Kang, Jichun Ye, "Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes," Photonics Res. 10, 2778 (2022)

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Paper Information

Category: Optical and Photonic Materials

Received: Mar. 30, 2022

Accepted: Sep. 26, 2022

Published Online: Nov. 21, 2022

The Author Email: Li Chen (chenli@nimte.ac.cn)

DOI:10.1364/PRJ.459897

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology