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Photonics Research, Volume. 10, Issue 12, 2778(2022)

Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes

Li Chen1,2、†,*, Jie Sun1、†, Wei Guo1,2, Jason Hoo3, Wei Lin4, Hangyang Chen4, Houqiang Xu1,5, Long Yan3, Shiping Guo3, Junyong Kang4, and Jichun Ye1,2,6
Author Affiliations
  • 1Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 2Yongjiang Laboratory, Ningbo 315201, China
  • 3Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China
  • 4Department of Physics, Xiamen University, Xiamen 361005, China
  • 5University of Chinese Academy of Sciences, Beijing 100049, China
  • 6e-mail:
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    Li Chen, Jie Sun, Wei Guo, Jason Hoo, Wei Lin, Hangyang Chen, Houqiang Xu, Long Yan, Shiping Guo, Junyong Kang, Jichun Ye, "Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes," Photonics Res. 10, 2778 (2022)

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    Paper Information

    Category: Optical and Photonic Materials

    Received: Mar. 30, 2022

    Accepted: Sep. 26, 2022

    Published Online: Nov. 21, 2022

    The Author Email: Li Chen (chenli@nimte.ac.cn)

    DOI:10.1364/PRJ.459897

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology