Acta Optica Sinica, Volume. 44, Issue 9, 0904001(2024)
A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate
Figures & Tables(7)
Fig. 2. Simulation results of SPAD. (a) I-V curves of P-I-N SPAD; (b) electric field distribution of P-I-N SPAD; (c) 2D electric field distribution (D3); (d) 2D electric field distribution (D2)
Fig. 3. Device photos and test results. (a) Micrograph of the SPAD; (b) I-V DC characteristic curves
Fig. 4. Test results of DCR and AP. (a) DCR versus excess voltage at different temperatures; (b) post-pulse histogram when D3=5 μm
Table 1. Key performance comparison of P-I-N SPADs
View tableTable 1. Key performance comparison of P-I-N SPADs
Method Technology Junction AP /% VBD /V Peak PDP /% @λ /nm PDP /% @901 nm DCR /（s-1·μm-2）@ VEX /V Gramuglia et al.［ 2 ］180 nm CMOS P-I-N 0.12-3 22 55@480 4.6 0.2@6 Liu et al.［ 3 ］55 nm CMOS P+/DNW N/A 26.1 20.3@660 5.9 20@2 Sun et al.［ 4 ］55 nm BSI CMOS P+/N well N/A 20.5 25.2@640 12 0.36@2.5 Wu et al.［ 5 ］180 nm CMOS N+/P well 4.5 30.8 26@520 3.2 4.03@10 Veerappan et al.［ 6 ］180 nm CMOS P-I-N 0.08 <40 47 5 1.5@11 Vornicu et al.［ 7 ］110 nm CIS PW/DNW 0.5 N/A 64@500 5.5 0.4@3 Gramuglia et al.［ 8 ］55 nm BCD DPW/BNW 0.97 31.5 62@530 5.6 0.1-2.6@1-7 This work 180 nm BCD P-I-N 1.2 56 41@600 6 0.56@5
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Zheng Li, Danlu Liu, Jie Dong, Dajing Bian, Yue Xu. A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate[J]. Acta Optica Sinica, 2024, 44(9): 0904001
Paper Information
Category: Detectors
Received: Nov. 16, 2023
Accepted: Feb. 27, 2024
Published Online: May. 15, 2024
The Author Email: Yue Xu (yuex@njupt.edu.cn)
CSTR:32393.14.AOS231800
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