A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate

Zheng Li; Danlu Liu; Jie Dong; Dajing Bian; Yue Xu

doi:10.3788/AOS231800

Acta Optica Sinica, Volume. 44, Issue 9, 0904001(2024)

A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate

Zheng Li¹, Danlu Liu¹, Jie Dong¹, Dajing Bian¹, and Yue Xu^1,2、*

¹College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, China

²National and Local Joint Engineering Laboratory of RF Integration & Micro-Assembly Technology, Nanjing 210023, Jiangsu, China

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Zheng Li, Danlu Liu, Jie Dong, Dajing Bian, Yue Xu. A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate[J]. Acta Optica Sinica, 2024, 44(9): 0904001

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Paper Information

Category: Detectors

Received: Nov. 16, 2023

Accepted: Feb. 27, 2024

Published Online: May. 15, 2024

The Author Email: Yue Xu (yuex@njupt.edu.cn)

DOI:10.3788/AOS231800

CSTR:32393.14.AOS231800

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology