[1] Casalino M, Sirleto L, Monetti L. A silicon compatible resonant cavity enhanced photodetector working at 1.55μm. Semiconductor Science & Technology, 23, 075001(2008).

[2] Aamer M, Gutierrez A M, Brimont A. CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section. IEEE Photonics Technology Letters, 24, 2031-2034(2012).

[4] Ni Z Y, Ma L L, Du S C. Plasmonic silicon quantum dots enabled high-sensitivity ultrabroadband photodetection of graphene-based hybrid phototransistors. ACS Nano, 11, 9854-9862(2017).

[5] Miao J S, Hu W D, Jing Y L. Surface plasmon-enhanced photodetection in few layer MoS₂ phototransistors with Au nanostructure arrays. Small, 11, 2392-2398(2015).

[6] Liang J, Hu W D, Ye Z H. Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure. . APPl. Phys, 115, 184504(2014).

[8] Her T H, Finlay R J, Wu C. Microstructuring of silicon with femtosecond laser pulses. Applied Physics Letters, 73, 1673-1675(1998).

[9] Yin Y L, Cao R, Guo J S. High-speed and high-responsivity hybrid silicon/black-phosphorus waveguide photodetector at 2 um. Laser & Photonics Reviews, 13, 1900032(2019).

[10] Desiatov B, Goykhman I, Mazurski N. Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime. Optica, 2, 335-338(2015).

[11] Hackett L P, Seyedi M A, Fiorentino M. Large-area silicon nanowire Schottky junction photodetector with tunable absorption and low junction capacitance. Journal of Physics D: Applied Physics, 50, 215105(2017).

[12] Hu F, Dai X Y, Zhou Z Q. Black silicon Schottky photodetector in sub-bandgap near-infrared regime. Optics Express, 27, 3163-3168(2019).

[13] Leskela M, Mattinen M, Ritala M. Review article: Atomic layer deposition of optoelectronic materials. Journal of vacuum Science & Technology B, 37, 030801(2019).

[14] Savin H, Repo P, Von Gastrow G. Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency. Nature Nanotechnology, 10, 624-628(2015).

[15] Di Bartolomeo A, Luongo G, Giubileo F. Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect. 2D Materials, 4, 025075(2017).